Light Emitting Device and Method of Manufacturing the Same

ABSTRACT

A light emitting device is provided which has a structure for lowering energy barriers at interfaces between layers of a laminate organic compound layer. A mixed layer ( 105 ) composed of a material that constitutes an organic compound layer ( 1 ) ( 102 ) and a material that constitutes an organic compound layer ( 2 ) ( 103 ) is formed at the interface between the organic compound layer ( 1 ) ( 102 ) and the organic compound layer ( 2 ) ( 103 ). The energy barrier formed between the organic compound layer ( 1 ) ( 102 ) and the organic compound layer ( 2 ) ( 103 ) thus can be lowered.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.11/967,749, filed Dec. 31, 2007, now allowed, which is a continuation ofU.S. application Ser. No. 10/024,699, filed Dec. 21, 2001, now U.S. Pat.No. 7,342,355, which claims the benefit of foreign priority applicationsfiled in Japan as Serial No. 2000-400730 on Dec. 28, 2000, and SerialNo. 2001-045847 on Feb. 21, 2001, all of which are incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting device using anorganic light emitting element with a film containing an organiccompound that emits light with application of electric field(hereinafter referred to as organic compound layer), as well as an anodeand a cathode. Specifically, the present invention relates to a lightemitting device using an organic light emitting element with lower drivevoltage than before and longer lifetime. The term light emitting devicein this specification refers to an image display device or a lightemitting device that employs as a light emitting element an organiclight emitting element. Also included in the definition of the lightemitting device are a module in which a connector, such as ananisotropic conductive film (FPC: flexible printed circuit), a TAB (tapeautomated bonding) tape, or a TCP (tape carrier package), is attached toan organic light emitting element, a module in which a printed wiringboard is provided on the tip of a TAB tape or a TCP, and a module inwhich an IC (integrated circuit) is mounted directly to an organic lightemitting element by the COG (chip on glass) method.

2. Description of the Related Art

An organic light emitting element is an element that emits light whenelectric field is applied. Light emission mechanism thereof is said tobe as follows. A voltage is applied to an organic compound layersandwiched between electrodes to cause recombination of electronsinjected from the cathode and holes injected from the anode at theluminescent center in the organic compound layer and, when the resultantmolecular excitons release energy in the form of light emission inreturning to base state.

There are two types of molecular excitons from organic compounds; one isfor a singlet exciton state and the other is for a triplet excitonstate. This specification includes both cases where the singletexcitation state causes light emission and where the triplet excitationstate causes light emission.

In an organic light emitting element as above, its organic compoundlayer is usually a thin film with a thickness of less than 1 μm. Inaddition, the organic light emitting element does not need back lightused in conventional liquid crystal displays because it is a self-lightemitting element and the organic compound layer itself emits light. Theorganic light emitting element therefore has a great advantage of beingmanufactured as a very thin and light-weight device.

When the organic compound layer is about 100 to 200 nm in thickness, forexample, recombination takes place within several tens nanoseconds basedon the mobility of the carriers in the organic compound layer. Even isthe process from carrier recombination to light emission is taken intoaccount, the organic light emitting element may be ready for lightemission within an order of microsecond. Accordingly, fast response isalso one of the features of the organic light emitting element.

Since the organic light emitting element is of carrier injection type,it can be driven with direct-current voltage and noise is hardlygenerated. Regarding driving voltage, a report says that a sufficientluminance of 100 cd/m² is obtained at 5.5 V by using a very thin filmwith a uniform thickness of about 100 nm for the organic compound layer,choosing an electrode material which is capable of lowering a carrierinjection barrier against the organic compound layer, and introducingthe hetero structure (laminate structure) (Reference 1: C. W. Tang andS. A. VanSlyke, “Organic electroluminescent diodes”, Applied PhysicsLetters, vol. 51, no. 12, 913-915 (1987)).

With those features, including being thin and light-weight, fastresponse, and direct-current low voltage driving, an organic lightemitting element is attracting attention as a next-generation flat paneldisplay element. In addition, for being self-light emitting device witha wide viewing angle, the organic light emitting element has bettervisibility and is considered as effective when used for display screensof electric appliances.

In the organic light emitting element disclosed in Reference 1, thecarrier injection barrier is lowered by using a Mg:Ag alloy that is lowin work function and is relatively stable as the cathode so that moreelectrons are injected. This makes it possible to inject a large numberof carriers into the organic compound layer.

Further, a single hetero structure, in which a hole transporting layerformed of diamine compound and an electron transporting light emittinglayer formed of tris (8-quinolinolate) aluminum complex (hereinafterreferred to as Alq₃) are layered as the organic compound layer, isadopted to improve the carrier recombination efficiency exponentially.This is explained as follows.

In the case of an organic light emitting element in which an organiccompound layer consists of a single layer of Alq₃, for example, most ofelectrons injected from a cathode reach the anode without beingrecombined with holes and the light emission efficiency is very low. Inshort, a material that can transport electrons and holes both inbalanced amounts (hereinafter referred to as bipolar material) has to beused in order that a single layer organic light emitting element canemit light efficiently (i.e., in order to drive at low voltage), andAlq₃ does not meet the requirement.

On the other hand, when the single hetero structure (two-layerstructure) as in Reference 1 is adopted, electrons injected from thecathode are blocked at the interface between the hole transporting layerand the electron transporting light emitting layer and trapped in theelectron transporting light emitting layer. Recombination of thecarriers thus takes place in the electron transporting light emittinglayer with high efficiency, resulting in efficient light emission.

Expanding this idea of carrier blocking function, it is possible tocontrol the carrier recombination region. To give an example, there is areport of success in making a hole transporting layer to emit light byinserting a layer that can block holes (hole blocking layer) between thehole transporting layer and an electron transporting layer and trappingthe holes in the hole transporting layer. (Reference 2: Yasunori KIJIMA,Nobutoshi ASAI and Shin-ichiro TAMURA, “A Blue Organic Light EmittingDiode”, Japanese Journal of Applied Physics, vol. 38, 5274-5277 (1999)).A hole blocking layer formed of a material as shown in Reference 2 hasan excitation energy higher than that of a light emitting layer andtherefore also prevents molecular excitons from diffusing.

It can be said that the organic light emitting element in Reference 1 ischaracterized by separation of functions in which the hole transportinglayer is assigned to transport holes and the electron transporting lightemitting layer is assigned to transport electrons and emit light. Theidea of separating functions has been expanded until a method isproposed in which three types of functions of hole transportation,electron transportation, and light emission are conducted by threedifferent materials. With this method, a material that scores poorly incarrier transportation but is high in light emission efficiency can beused as a light emitting material and the light emission efficiency ofthe organic light emitting element is accordingly improved.

The typical method thereof is pigment doping (Reference 3: C. W. Tang,S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organicthin films”, Journal of Applied Physics, vol. 65, no. 9, 3610-3616,(1989)). As shown in FIG. 13A, in a single hetero structure providedwith a hole transporting layer 1101 and an electron transporting layer1102 (1102 also serves as a light emitting layer), the electrontransporting layer 1102 is doped with a pigment 1103 to give emittedlight the color of the pigment 1103. The hole transporting layer 1101side may instead be doped with the pigment 1103.

In contrast to this, there is a double hetero structure (three-layerstructure) in which a light emitting layer is sandwiched between a holetransporting layer and an electron transporting layer as shown in FIG.13B (Reference 4: Chihaya ADACHI, Shizuo TOKITO, Tetsuo TSUTSUI andShogo SAITO, “Electroluminescence in Organic Films with Three-layeredStructure”, Japanese Journal of Applied Physics, Vol. 27, No. 2,L269-L271 (1988)). In this method, holes are injected from the holetransporting layer 1101 to a light emitting layer 1104 and electrons areinjected from an electron transporting layer 1102 to the light emittinglayer 1104. Therefore, recombination of the carriers takes place in thelight emitting layer 1104 and light with the color of the material usedas the light emitting layer 1104 is emitted.

An advantage of separating functions is an increased degree of freedomin molecule design and the like since the separation of functions savesone organic material from bearing various functions (such as lightemission, carrier transportation, and injection of carriers fromelectrodes) simultaneously (for instance, the separation of functionsmakes the effort to find a bipolar material unnecessary). In otherwords, high light emission efficiency can easily be obtained by simplycombining a material excellent in light emission characteristic with amaterial excellent in carrier transportation ability.

Because of these advantages, the idea itself of laminate structuredescribed in References 1 to 4 (carrier blocking function or separationof functions) continues to be utilized widely.

However, the laminate structures as described above are joiningdifferent substances and thus cannot avoid energy barriers formed atinterfaces. The energy barriers block movement of carriers at theinterfaces and raise the following two problems.

One problem is that the energy barriers are pullback in further loweringdrive voltage. In fact, a report says that, as for current organic lightemitting element, an element with a single layer structure using aconjugate system polymer is superior in terms of drive voltage to anelement with a laminate structure and hold the top data in powerefficiency (unit: lm/w) (note that comparison made in the report is forlight emission from singlet excitation and the report does not deal withlight emission from triplet excitation) (Reference 5: Tetsuo Tsutsui,“Journal of Organic Molecular Electronics and Bioelectronics Division ofThe Japan Society of Applied Physics”, vol. 11, no. 1, p. 8 (2000)).

The conjugate system polymers mentioned in Reference 5 are bipolarmaterials and can provide the same level of carrier recombinationefficiency as the materials in the laminate structures. Therefore, thedrive voltage is actually lower in the single layer structure that hasless interfaces than in the laminate structures if the single layerstructure can provide the same level of carrier recombination efficiencyby using a bipolar material or by other methods without using thelaminate structure.

For example, drive voltage can be lowered by inserting a material thatcan lower an energy barrier at the interface with an electrode in orderthat more carriers can be injected (Reference 6: Takeo Wakimoto,Yoshinori Fukuda, Kenichi Nagayama, Akira Yokoi, Hitoshi Nakada, andMasami Tsuchida, “Organic EL Cells Using Alkaline Metal Compounds asElectron Injection Materials”, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 44, no. 8, 1245-1248 (1997)). In Reference 6, drive voltage hassuccessfully been lowered by using LiO₂ for an electron injection layer.

However, issues regarding the mobility of carriers between organicmaterials (between a hole transporting layer and a light emitting layer,for example, and hereinafter referred to as ‘between organic layers’)have not been solved yet and are considered as the key to catch up tolow drive voltage of the single layer structure.

The other problem caused by the energy barriers is an influence on theelement lifetime of the organic light emitting element. In other words,the luminance is lowered by inhibited carrier injection and theresultant accumulation of charges.

Although there is no theory that explains the mechanism of thisdegradation clearly, a report says that lowering of luminance can belimited by inserting a hole injection layer between an anode and a holetransporting layer and by ac driving at square wave instead of dcdriving (Reference 7: S. A. VanSylke, C. H. Chen, and C. W. Tang,“Organic electroluminescent devices with improved stability”, AppliedPhysics Letters, Vol. 69, No. 15, 2160-2162 (1996)). This isverification by experiments, that lowering of luminance can be limitedby avoiding accumulation of charges through insertion of a holeinjection layer and ac driving.

Concluded from the above is that the laminate structures can readilyenhance the carrier recombination efficiency and can widen the choice ofmaterials from the standpoint of separation of functions, however, onthe other hand, hinder movement of carriers and influence drive voltageand lowering of luminance because there are many interfaces between manyorganic layers.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above, and an objectof the present invention is therefore to provide an organic lightemitting element that is lower in drive voltage and longer in elementlifetime than conventional one by lowering energy barriers betweenorganic layers while utilizing the advantages of the laminate structures(carrier blocking function or separation of functions) which haveconventionally been used.

Another object of the present invention is to provide a light emittingdevice that is lower in drive voltage and longer in lifetime thanconventional one by employing this organic light emitting element. Stillanother object of the present invention is to provide an electricappliance that consumes less power and lasts longer duration compared toprior art by manufacturing it using this light emitting device.

The doping of a pigment 1103 method as in FIG. 13A has such a merit thatit allows an organic light emitting element to use a material that doesnot emit light when it is solid but is observed to emit light only whendispersed in a solution at a low concentration (e.g., quinacridon).Accordingly, the method can be regarded as effective for light emittingmaterials that are liable to concentration quenching.

A demerit of the method is that the amount of pigment used in doping isusually very small (less than 1 wt % in some cases) and control ofevaporation amount is difficult if the organic light emitting element ismanufactured by the widely employed vacuum evaporation. The lightemission efficiency is particularly responsive to changes in amount ofpigment used for doping, and it is conceivable that the light emissionefficiency fluctuates between elements manufactured by vacuumevaporation.

Further, pigment is the guest in the pigment doping method. In thiscase, the difference in energy between the highest occupied molecularorbital (HOMO) and the lowest unoccupied molecular orbital (LUMO)(hereinafter referred to as excitation energy level) of the hostmaterial has to be larger than the excitation energy level of the guest.In addition, the host has to be good at transporting carriers. It ismore desirable that the maximum emission wavelength of the host matchesthe maximum absorption wavelength of the guest to enhance the lightemission efficiency.

However, the host in relation to a blue colored guest, for example, isrequired to have a far larger excitation energy level than shortwavelength visible light such as blue light and therefore the choice ofhost materials is very limited. Regarding the host for a red coloredguest, no material that meets all of the above requirements has everbeen found. It is another demerit of the pigment doping method that ahost material optimum for the pigment used in doping has to be selected.

Considering the above, the double hetero structure as the one in FIG.13B (hole transporting layer+light emitting layer+electron transportinglayer) may be preferred. Although one that can emit light even in itssolid state has to be chosen (in other words, concentration quenchingmaterials cannot be used) as the material of the light emitting layer,the ability of transporting a large number of carriers is not alwaysnecessary. Therefore the choice of materials is relatively large.

However, the double hetero structure as shown in FIG. 13B is joiningthree different substances, and there are interfaces (hereinafterreferred to as organic interface) between every two layers (between thehole transporting layer 1101 and the light emitting layer 1104, andbetween the electron transporting layer 1102 and the light emittinglayer 1104). Accordingly, the structure suffers from the above-describedtwo problems caused by organic interfaces.

To summarize, the double hetero structure as in FIG. 13B has a big meritof being capable of separating functions without using the pigmentdoping method, however, on the other hand, has organic interfaces atboth edges of the light emitting layer to hinder movement of carriersinto the light emitting layer and greatly influence drive voltage andelement lifetime.

It is therefore an object of the present invention to particularlyenhance the mobility of carriers by removing organic interfaces in thedouble hetero structures that have conventionally been used and, at thesame time, to utilize the idea of separation of functions in the doublehetero structures to express the respective functions (hereinafterreferred to as function expression). Another object of the presentinvention is to thereby provide an organic light emitting element thatis lower in drive voltage and longer in element lifetime thanconventional one.

Still another object of the present invention is to provide a lightemitting device that is lower in drive voltage and longer in lifetimethan conventional one by employing this organic light emitting element.Yet still another object of the present invention is to provide anelectric appliance that consumes less power and lasts longer durationcompared to prior art by manufacturing it using this light emittingdevice.

As a model for blocking of carrier movement by organic interfaces, thepresent inventors have thought of the following two mechanisms.

One mechanism involves morphology of organic interfaces. An organiccompound film in an organic light emitting element is usually anamorphous film, which is formed from organic compound moleculesaggregated by intermolecular forces, mainly, dipole interaction. When ahetero structure is built using such aggregation of molecules, however,differences in size and shapes of molecules could greatly influenceinterfaces (namely, organic interfaces) of the laminate structure.

If the laminate structure is built using materials that have largedifference in molecule size, in particular, the conformance in joiningin organic interfaces can be poor. A conceptual diagram thereof is shownin FIG. 14. In FIG. 14, a first layer 1411 consisting of small molecules1401 and a second layer 1412 consisting of large molecules 1402 arelayered. In this case, poor conformance regions 1414 are formed at anorganic interface 1413 between the layers 1411 and 1412.

The poor conformance regions 1414 shown in FIG. 14 could act as barrier(or energy barrier) that blocks movement of carriers and therefore couldbe an opposition to lowering drive voltage. Further, carriers thatcannot cross the energy barrier accumulate as charges and can inducelowering of luminance as described above.

The other mechanism involves the process of building the laminatestructure (i.e., forming organic interfaces). The organic light emittingelement with the laminate structure is usually manufactured bymulti-chamber type (in-line type) evaporation apparatus as the one shownin FIG. 15 in order to avoid contamination in forming the respectivelayers.

The example shown in FIG. 15 is a conceptual diagram of evaporationapparatus for making the double hetero structure that is composed of ahole transporting layer, a light emitting layer, and an electrontransporting layer. First, a substrate with an anode (formed of, e.g.,indium tin oxide (hereinafter referred to as ITO)) is brought into aloading chamber. The substrate is irradiated with ultraviolet rays in avacuum atmosphere in an ultraviolet ray irradiation chamber to clean theanode surface. When the anode is an oxide such as ITO in particular,oxidization treatment is conducted in a pretreatment chamber. Then thelayers of the laminate structure are formed. The hole transporting layeris formed in an evaporation chamber 1501, the light emitting layers(red, green, and blue layers in FIG. 15) are formed in evaporationchambers 1502 to 1504, and the electron transporting layer is formed inan evaporation chamber 1505. A cathode is formed by evaporation in anevaporation chamber 1506. Lastly, sealing is conducted in a sealingchamber and the substrate is taken out of an unloading chamber to obtainthe organic light emitting element. Symbols 1511 to 1516 denoteevaporation sources.

The in-line type evaporation apparatus above is characterized in thatdifferent layers are formed by evaporation in different chambers 1501 to1505. In other words, the apparatus is structured such that mixing ofmaterials of the layers is avoided almost completely.

Although the pressure in the interior of the evaporation apparatus isusually reduced to about 10⁻⁴ to 10⁻⁵ pascal, there are minute amountsof gas components (such as oxygen and water). It is said that, with thevacuum of this degree, these minute amounts of gas components canreadily form a monomolecular adsorption layer within a few seconds.

Accordingly, when the organic light emitting element with the laminatestructure is manufactured using the apparatus as in FIG. 15, the problemis a large interval between formation of one layer and formation ofanother layer. In other words, an undesirable adsorption layer due to aminute amount of gas components (hereinafter referred to as impuritylayer) might be formed in an interval between formation of layers,especially when the substrate is transferred through a secondtransferring chamber.

A conceptual diagram thereof is shown in FIG. 16. In FIG. 16, animpurity layer 1613 is being formed from a minute amount of impurities1603 (such as water and oxygen) between a first layer 1611 formed of afirst organic compound 1601 and a second layer 1612 formed of a secondorganic compound 1602 when the second layer is layered on the firstlayer.

Impurity layers are formed between the layers (namely organicinterfaces) in this way and, serve as impurity regions that trapcarriers after the organic light emitting element is completed, therebyblocking movement of the carriers and raising drive voltage.Furthermore, the presence of the impurity regions that trap carriersleads to accumulation of charges, and therefore towering of luminance asdescribed above could be induced.

Considering such structure, the present inventors have devised a measureshown in FIGS. 1B and 1D as a method to solve the above-mentionedproblems. The measure is, in the case where an organic compound layer(1) 102 and an organic compound layer (2) 103 are layered between ananode 101 and a cathode 104 of an organic light emitting element, astructure (FIG. 1B) in which a mixed layer 105 containing both thematerial that constitutes the organic compound layer (1) 102 and thematerial that constitutes the organic compound layer (2) 103 is formedbetween the organic compound layer (1) 102 and the organic compoundlayer (2) 103. The structure (FIG. 1B) is a replacement of theconventional laminate structure (FIG. 1A) in which a definite interfaceexists. The term mixed layer here includes a region containing both thematerial that constitutes the organic compound layer (1) 102 and thematerial that constitutes the organic compound layer (2) 103 even if itsinterfaces with the organic compound layer (1) 102 and with the organiccompound layer (2) 103 are not clear.

The element as this substantially has no organic interfaces of theconventional laminate structures described above. The aforementionedproblems caused by organic interfaces (degraded organic interfacemorphology and formation of impurity layers) can therefore be solved.

First, how degradation of organic interface morphology is solved isexplained with reference to FIG. 20. FIG. 20 is a sectional view of anorganic compound film composed of a region 1811, a region 1812, and amixed region 1813. The region 1811 consists of small molecules 1801. Theregion 1812 consists of large molecules 1802. The mixed region 1813contains both the small molecules 1801 and large molecules 1802. As isapparent from FIG. 20, there are no organic interfaces 1413 present inFIG. 14, nor poor conformance regions 1414.

How the problem of formation of impurity layers is solved is simple andobvious. When an organic light emitting element as FIG. 17 is to bemanufactured, a hole transporting material is deposited on an anode byevaporation and, a light emitting material is additionally deposited bycoevaporation to form a first mixed region before the deposition iscompleted. After the first mixed region is completed, deposition of thehole transporting material by evaporation is stopped and only depositionof the light emitting material by evaporation is continued. Subsequentsteps are similar to this and one or two materials are continuouslydeposited by evaporation without forming organic interfaces until anelectron transporting region is completed. Accordingly, there is nointerval that is usually present when an organic light emitting elementis manufactured using the evaporation apparatus as the one in FIG. 15.In short, there is no time to form impurity layers.

By employing the structure shown in FIG. 1B, the energy barrier betweenorganic layers is lowered compared to the conventional structure shownin FIG. 1A and more carriers can be injected. Specifically, the energyband diagram for the structure of FIG. 1A is as shown in FIG. 1C whereasthe energy band diagram for the structure of FIG. 1B, in which a mixedlayer is provided between organic layers, is as shown in FIG. 1D. FIGS.1C and 1D show that the energy barrier between organic layers can belowered by building a continuous joint structure to create a continuousenergy change. Accordingly, drive voltage can be lowered and lowering ofluminance can be prevented.

From the above, a light emitting device according to the presentinvention has an organic light emitting element including at least afirst layer that is composed of an organic compound and a second layerthat is composed of an organic compound different from the organiccompound that constitutes the first layer, and is characterized in thata mixed layer containing the organic compound that constitutes the firstlayer and the organic compound that constitutes the second layer both isprovided between the first layer and the second layer.

Combinations of the first layer and the second layer described above areshown in Table 1. A single combination (for example, Combination Aalone) or plural combinations (for example, Combinations A and B both)out of Combinations A to E may be introduced.

Table 1

If Combinations C and D are both introduced (in other words, if thelight emitting layer has a mixed layer on both sides thereof), the lightemission efficiency can further be enhanced by preventing diffusion ofmolecular excitons formed in the light emitting layer. Therefore theexcitation energy of the light emitting layer is preferably lower thanthe excitation energy of the hole transporting layer and lower than theexcitation energy of the electron transporting layer. In this case, alight emitting material with poor carrier transporting ability can beused as the light emitting layer to advantageously widen the choice ofmaterials. The term excitation energy in this specification refers tothe difference in energy between the highest occupied molecular orbital(HOMO) and the lowest unoccupied molecular orbital (LUMO) of a molecule.

More desirably, the light emitting layer is composed of a host materialand a light emitting material (dopant) that has an excitation energylower than that of the host material, so that the excitation energy ofthe hole transporting layer and the excitation energy of the electrontransporting layer respectively exceed the excitation energy of thedopant. This prevents molecular exciton of the dopant from diffusing andmakes the dopant to emit light effectively. Carrier recombinationefficiency is also enhanced if the dopant is a carrier trapping typematerial.

In the present invention described above, joining the mixed layercontinuously is considered effective as a measure to further enhance themobility of carriers. The mixed layer is preferably formed to haveconcentration gradient. Accordingly, the present invention ischaracterized in that the mixed layer has concentration gradient.

The present inventors have further devised a measure to provide anorganic light emitting element in which organic interfaces of the doublehetero structure are removed while making the function expressionpossible. A conceptual diagram thereof is shown in FIG. 17. Although ananode 1702 is placed on a substrate 1701 in FIG. 17, the structure maybe reversed to place a cathode 1704 on the substrate.

In the element of FIG. 17, an organic compound film 1703 containing ahole transporting material, a light emitting material, and an electrontransporting material is provided with a hole transporting region 1705,a light emitting region 1706, and an electron transporting region 1707.The hole transporting region 1705 consists of a hole transportingmaterial. The light emitting region 1706 consists of a light emittingmaterial. The electron transporting region 1707 consists of an electrontransporting material. As a characteristic of the present invention, theorganic compound film is further provided with a first mixed region 1708in which the hole transporting material and the light emitting materialare mixed and a second mixed region 1709 in which the electrontransporting material and the light emitting material are mixed.

FIGS. 18 and 19 show examples of the concentration profile in the filmthickness direction in the element of FIG. 17. Shown in FIG. 18 is theprofile when the composition ratio of the hole transporting material andthe light emitting material in the first mixed region 1708 is x:z, andis constant whereas the composition ratio of the electron transportingmaterial and the light emitting material in the second mixed region 1709is y:z₂ and is constant. FIG. 19 shows the profile when the first mixedregion 1708 and the second mixed region 1709 have concentrationgradient.

The element of FIG. 17 also has no organic interfaces, and thereforecarriers move smoothly and drive voltage as well as element lifetime arenot affected as described above. Furthermore, the element has no problemin terms of light emission efficiency because of separation of functionsas in the conventional double hetero structure.

In contrast to the conventional hetero structure (laminate structure)that is a simple joining different substances (hetero junction), thestructure of the present invention is what can be called a mixedjunction and it provides an organic light emitting element based on anovel concept.

Therefore a light emitting device according to the present invention hasan organic light emitting element with an organic compound filminterposed between an anode and a cathode, the organic compound filmcontains a hole transporting material, an electron transportingmaterial, and a light emitting material, and the light emitting deviceis characterized in that the organic compound film is composed of a holetransporting region, a first mixed region, a light emitting region, asecond mixed region, and an electron transporting region that areconnected in the order, the hole transporting region is nearest to theanode and the electron transporting region is nearest to the cathode,the hole transporting region contains the hole transporting material,the first mixed region contains both the hole transporting material andthe light emitting material, the light emitting region contains thelight emitting material, the second mixed region contains both theelectron transporting material and the light emitting material, theelectron transporting region contains the electron transportingmaterial.

As shown in FIG. 21A, a hole injecting region 1710 formed of a materialthat increases the number of holes injected (hereinafter referred to ashole injecting material) may be inserted between the anode 1702 and theorganic compound film 1703. Alternatively, an electron injecting region1711 formed of a material that increases the number of electronsinjected (hereinafter referred to as electron injecting material) may beinserted between the cathode 1704 and the organic compound film 1703 asshown in FIG. 21B. Both the hole injecting region and the electroninjecting region may be employed simultaneously.

In those cases, the hole injecting material or the electron injectingmaterial is a material for lowering the barrier in injecting carriersfrom an electrode to the organic compound film and therefore has effectsof smoothing movement of the carriers from the electrode to the organiccompound film and avoiding accumulation of charges. However, from thestandpoint of avoiding formation of impurity layers as described above,the injecting material is formed into a film without putting an intervalbefore or after forming the organic compound film.

The organic light emitting element of the present invention describedabove may have a light emitting region in which a host material is dopedwith a light emitting material. Specifically, as shown in FIG. 22, anorganic compound film 11003 contains a hole transporting material, anelectron transporting material, a light emitting material, and a hostmaterial that serves as a host to the light emitting material, and isprovided with a hole transporting region 11005, a light emitting region11006, and an electron transporting region 11007. The hole transportingregion consists of the hole transporting material. The light emittingregion contains the host material doped with a light emitting material11012. The electron transporting region consists of the electrontransporting material. This organic compound film is, as acharacteristic of the present invention, further provided with a firstmixed region 11008 in which the hole transporting material and the hostmaterial are mixed and a second mixed region 11009 in which the electrontransporting material and the host material are mixed.

This element has such a demerit that controlling of the amount of thelight emitting material 11012 used in doping is difficult as explainedreferring to FIG. 13A. However, there is a merit of wide choice of hostmaterials because the ability of transporting a large number of carriersis not so necessary compared to the structure of FIG. 13A. Since thehost material is doped with the light emitting material 11012, thiselement is also effective in preventing carriers from passing the lightemitting region without stopping, which usually is likely to occur whenthe thickness of the light emitting region 11006 is reduced in order tolower drive voltage.

In the element of FIG. 22, a hole injecting region 11010 formed of ahole injecting material may be inserted between an anode 11002 and theorganic compound film 11003. Alternatively, an electron injecting region11011 formed of an electron injecting material may be inserted between acathode 11004 and the organic compound film 11003. It is also possibleto employ both the hole injecting region and the electron injectingregion simultaneously. Shown in FIG. 22 is an example of forming thehole injecting region 11010 and the electron injecting region 11011both.

When the hole injecting region is provided in the organic light emittingelement described above, it is particularly preferable to use a materialwith the p type conductivity. As an example thereof, a method may beemployed in which a {hacek over (o)}-electron conjugate system organiccompound is doped with Lewis acid to improve the conductivity. From thestandpoint of film formation method, it is preferred to use a polymericcompound that can be formed into a film by wet application. PreferableLewis acid is a compound that contains a halogen element such as iodine.

When the electron injecting region is provided in the organic lightemitting element described above, it is particularly preferable to use amaterial having the n type conductivity. As an example thereof, a methodmay be employed in which a {hacek over (o)}-electron conjugate systemorganic compound is doped with Lewis base to improve the conductivity.Preferable Lewis base is a compound that contains an alkaline metalelement such as cesium.

In recent years, organic light emitting elements that can convert energydischarged in returning from triplet excitation to base state(hereinafter referred to as triplet excitation energy) into lightemission, have been attracting attention because of their high lightemission efficiency (Reference 8: D. F. O'Brien, M. A. Baldo, M. E.Thompson and S. R. Forrest, “Improved energy transfer inelectrophosphorescent devices”, Applied Physics Letters, vol. 74, no. 3,442-444 (1999)) (Reference 9: Tetsuo TSUTSUI, Moon-Jae YANG, MasayukiYAHIRO, Kenji NAKAMURA, Teruichi WATANABE, Taishi TSUJI, YoshinoriFUKUDA, Takeo WAKIMOTO and Satoshi MIYAGUCHI, “High Quantum Efficiencyin Organic Light-Emitting Devices with Iridium-Complex as a TripletEmissive Center”, Japanese Journal of Applied Physics, vol. 38,L1502-L1504 (1999)).

A metal complex with platinum as central metal is used in reference 8and a metal complex with iridium as central metal is used in Reference9. These organic light emitting elements that can convert tripletexcitation energy into light emission (hereinafter referred to astriplet light emission elements) can emit light with higher luminanceand higher light emission efficiency than conventional ones.

However, according to the report of Reference 9, the period of halfdecay of the luminance is about 170 hours when the initial luminance isset to 500 cd/m² and this is not a satisfiable element lifetime.Probably, the reason for short element lifetime of triplet lightemission elements is that necessity of a proper host material for alight emitting material as well as a blocking material for preventingmolecular exciton from diffusing leads to form a multi-layer structureand many organic interfaces.

Then the idea of the present invention, namely, introducing a mixedlayer between organic layers, is applied to a triplet light emissionelement. The thus obtained element emits light from triplet excitationnot only with high luminance and high light emission efficiency but alsowith a long element lifetime to be made a very highly functional lightemitting element.

Triplet molecular excitons are larger in diffusion length than singletmolecular excitons and therefore need a material that plays a rolesimilar to the role of a blocking material (in general, a material withan excitation energy level larger than that of a molecular exciton ofthe light emitting seed is appropriate). Considering the elementstructure, it is preferable that an electron transporting material takesthe role.

The first mixed region and the second mixed region that are employed bythe organic light emitting element of the present invention describedabove may have concentration gradient as shown in FIG. 19. This is moredesirable because it is expected that the concentration gradient canremove energy barriers against carriers at both edges of the lightemitting region almost completely.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D are diagrams illustrating a mixed layer in the presentinvention;

FIGS. 2A and 2B are diagrams illustrating concentration gradient in amixed layer;

FIGS. 3A to 3D are diagrams illustrating formation of a mixed layer:

FIG. 4 is a diagram illustrating the element structure in an organiclight emitting element according to the present invention;

FIG. 5 is a diagram illustrating the element structure in an organiclight emitting element according to the present invention;

FIG. 6 is a diagram illustrating the element structure in an organiclight emitting element according to the present invention;

FIGS. 7A to 7D are diagrams illustrating a manufacture process;

FIGS. 8A to 8C are diagrams illustrating a manufacture process;

FIGS. 9A to 9C are diagrams illustrating a manufacture process;

FIGS. 10A and 10B are diagrams illustrating a sealing structure of alight emitting device;

FIG. 11 is a sectional view illustrating a light emitting device;

FIGS. 12A to 12H are diagrams showing examples of an electric appliance;

FIGS. 13A and 13B are diagrams showing a conventional organic lightemitting element;

FIG. 14 is a diagram showing a state of an organic interface;

FIG. 15 is a diagram showing evaporation apparatus;

FIG. 16 is a diagram showing formation of an impurity layer;

FIG. 17 is a diagram showing the structure of an organic light emittingelement;

FIG. 18 is a diagram showing the concentration profile;

FIG. 19 is a diagram showing the concentration profile;

FIG. 20 is a diagram showing a state of a mixed region;

FIGS. 21A and 21B are diagrams showing the structure of an organic lightemitting element;

FIG. 22 is a diagram showing the structure of an organic light emittingelement;

FIGS. 23A and 23B are diagrams showing evaporation apparatus;

FIGS. 24A and 24B are diagrams showing the sectional structure of alight emitting device;

FIG. 25 is a diagram showing the sectional structure of a light emittingdevice;

FIGS. 26A and 26B are diagrams showing the sectional structure of alight emitting device;

FIGS. 27A and 27B are diagrams respectively showing the top structureand the sectional structure of a light emitting device;

FIG. 28 is a diagram showing the top structure and the sectionalstructure of a light emitting device;

FIGS. 29A to 29C are diagrams of a light emitting device with FIG. 29Ashowing the top structure thereof and FIGS. 29B and 29C showing thesectional structure thereof;

FIGS. 30A and 30B are diagrams schematically showing a light emittingdevice that uses color filters;

FIGS. 31A and 31B are diagrams schematically showing a light emittingdevice that uses color conversion layers;

FIGS. 32A and 32B are diagrams showing the structure of a light emittingdevice;

FIGS. 33A and 33B are diagrams showing the structure of a light emittingdevice;

FIGS. 34A to 34C are diagrams showing the structure of a light emittingdevice;

FIGS. 35A to 35F are diagrams showing specific examples of an electricappliance;

FIGS. 36A and 36B are diagrams showing specific examples of an electricappliance; and

FIG. 37 is a diagram showing an example of an active matrix typeconstant-current driving circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A method of manufacturing an organic light emitting element according tothe present invention will be described with reference to FIGS. 2A and2B and FIGS. 3A to 3D.

First, an anode 201 is formed on a substrate 200 by sputtering orevaporation. On the anode 201, an organic compound layer (1) 202 isformed. The organic compound layer (1) 202 is formed using an organiccompound 1 by vacuum evaporation.

A mixed layer 205 is formed next. The mixed layer 205 is formed, bycoevaporation under vacuum, using the material that constitutes theorganic compound layer (1) 202 (the organic compound 1) and a materialthat later constitutes an organic compound layer (2) 203 (an organiccompound 2). Coevaporation is an evaporation method in which evaporationcells are simultaneously heated to mix different substances during filmformation.

When a mixed layer is formed using a plurality of organic compounds bycoevaporation, the concentrations of the respective organic compoundscontained in the mixed layer can be controlled. FIG. 2B shows an exampleof the case where the organic compound 1 and the organic compound 2contained in the mixed layer 205 have concentration gradient.

Shown in FIG. 2B is the relation between the ratio of the plural organiccompounds in the mixed layer (concentration: %) and the distance fromthe mixed layer to the organic compound layers that are in contact withthe mixed layer. In FIG. 2B, the axis of abscissa indicates theconcentration (%) of the organic compounds contained in the mixed layer205 and the axis of ordinate indicates the distance from the mixed layer205 to the organic compound layer (1) 202 and the organic compound layer(2) 203 that are in contact with the mixed layer.

In the mixed layer 205 shown in FIG. 2B, the concentration of theorganic compound 1 used to form the organic compound layer (1) 202 isnearly 100% in the vicinity of the interface between the mixed layer 205and the organic compound layer (1) 202. This concentration declines asthe distance from the organic compound layer (1) 202 is increased andreaches almost 0% in the vicinity of the interface between the mixedlayer 205 and the organic compound layer (2) 203. The concentration ofthe organic compound 2 used to form the organic compound layer (2) 203behaves in a reversed manner, and rises as the distance from the organiccompound layer (1) 202 is increased to approach 100% in the vicinity ofthe interface between the mixed layer 205 and the organic compound layer(2) 203.

By introducing gradient to the concentration of the materials thatconstitute the mixed layer 205 as described above, the mixed layer 205can lower energy barriers between organic layers. It is thereforeeffective in improving the mobility of carriers.

On the mixed layer 205, the organic compound layer (2) 203 is formed.The material of the organic compound layer (2) 203 is the organiccompound 2 and the compound is formed into a film by evaporation undervacuum.

A laminate structure composed of organic compounds is completed throughthe above steps. Thereafter, a cathode is formed by evaporation orsputtering to complete the organic light emitting element.

Now, detailed descriptions will be given with reference to FIGS. 3A to3D on how the organic compound layers (the organic compound layer (1)202 and the organic compound layer (2) 203) and the mixed layer areformed. In FIGS. 3A to 3D, components identical with those in FIGS. 2Aand 2B are denoted by the same symbols.

In FIG. 3A, the anode 201 is formed on the substrate 200 and the organiccompound layer (1) 202 is formed on the anode 201 from the organiccompound 1. The organic compound layer (1) 202 is formed by evaporationin a film forming chamber as shown in FIG. 3D. In a film forming chamber310, a substrate on which a film is to be formed is placed on a fixingbase 311 and evaporation is performed on the substrate while being fixedor rotated.

In FIG. 3D, the film forming chamber 310 is provided with a plurality ofsample chambers. Each sample chamber contains an organic compound forforming an organic compound layer. Shown in FIG. 3D is the case in whichthere are two sample chambers, but the number of sample chambers may bethree or more.

A sample chamber (a) 312 in FIG. 3D contains an organic compound 1(316). That is, when a shutter (a) 314 provided in the sample chamber(a) 312 is opened, the organic compound 1 (316) serves as an evaporationsource to form the organic compound layer (1) 202.

Next, the mixed layer 205 is formed as shown in FIG. 3B. The mixed layer205 uses as evaporation sources the organic compound 1 (316) containedin the sample chamber (a) 312 and an organic compound 2 (317) containedin a sample chamber (b) 313. The shutter (a) 314 provided in the samplechamber (a) 312 and a shutter (b) 315 provided in the sample chamber (b)313 are opened and the organic compound 1 (316) and the organic compound2 (317) used as the evaporation sources are formed into a film bycoevaporation.

If the concentrations of the organic compounds in the mixed layer are tobe controlled as described above, opening of the shutter (a) 314 and theshutter (b) 315 is adjusted to obtain the concentration gradient of themixed layer shown in FIG. 2B.

Next, the shutter (a) 314 of the sample chamber (a) 312 is closed whilethe shutter (b) 315 of the sample chamber (b) 313 is kept opened. Theorganic compound layer (2) 203 is thus formed with the organic compound2 as the evaporation source (FIG. 3C).

The organic compound layer of the organic light emitting element isformed as a laminate of plural organic compound layers such as a holeinjecting layer, a hole transporting layer, a light emitting layer, ahole blocking layer, an electron transporting layer, and an electroninjecting layer in order to handle different functions. If a mixed layeris to be formed at the interface between organic compound layers, theposition of the mixed layer to be formed is important in designing theelement structure of an organic light emitting element since thelaminate structure varies among organic light emitting elements. Thendetailed descriptions will be given below about organic light emittingelements with specific element structures.

Embodiment Mode 1

Embodiment Mode 1 describes a case of forming mixed layers at interfacesof organic compound layers with a light emitting layer in an organiclight emitting element that has an organic compound layer 403 between ananode 401 and a cathode 402 as shown in FIG. 4.

In this embodiment mode, the organic compound layer 403 has a laminatestructure of a plurality of organic compound layers. Specifically, ahole injecting layer 404 for improving injection of holes from the anodeis formed on the anode 401, and a hole transporting layer 405 forimproving transportation of the injected holes is formed on the holeinjection layer 404.

A mixed layer (1) 407 is formed by coevaporation using the material thatconstitutes the hole transporting layer 405 and the material thatconstitutes a light emitting layer 406. The coevaporation is carried outin the manner described above. At this point, the mixed layer (1) 407may have concentration gradient.

By providing the mixed layer (1) 407, the energy barrier between thehole transporting layer 405 and the light emitting layer 406 can berelaxed. Therefore more holes can be injected from the hole transportinglayer 405 to the light emitting layer 406.

The light emitting layer 406 is formed on the mixed layer (1) 407. Inthe case of the laminate structure of the organic compound layer shownin Embodiment Mode 1, the organic compound forming the light emittinglayer is preferably lower in excitation energy than the material formingthe hole transporting layer 405 and the material forming an electrontransporting layer 408; respectively. This is because injection ofcarriers to the light emitting layer is improved by providing the mixedlayer at the interface between the light emitting layer and the organiccompound layer, with the result that the carriers easily pass the lightemitting layer. In addition to using an organic compound with a lowexcitation energy for the light emitting layer, a dopant with a lowexcitation energy may be used.

On the light emitting layer 406, a mixed layer (2) 409 is formed bycoevaporation using the material for forming the light emitting layer406 and the material for forming the electron transporting layer 408. Itis preferable for the mixed layer (2) 409 to have concentration gradientsimilar to the mixed layer (1) 407.

On the mixed layer (2) 409, the electron transporting layer 408 isformed by evaporation and then the cathode 402 is formed by evaporationor sputtering to complete the organic light emitting element.

The organic light emitting element shown above has a structure in whichmixed layers are provided at interfaces of organic compound layers witha light emitting layer (specifically, the interface between the lightemitting layer and a hole transporting layer and the interface betweenthe light emitting layer and an electron transporting layer). By givingthe organic light emitting element with this structure, injection ofholes from the hole transporting layer to the light emitting layer andinjection of electrons from the electron transporting layer to the lightemitting layer are improved to enhance recombination of carriers in thelight emitting layer.

Embodiment Mode 2

Embodiment Mode 2 gives a description on a case of manufacturing anorganic light emitting element with an element structure different fromthe one shown in Embodiment Mode 1.

The description given in Embodiment Mode 2 is a case in which mixedlayers are formed at interfaces of organic compound layer with alaminate structure when an organic light emitting element is a tripletlight emission element.

In Embodiment Mode 2, a laminate organic compound layer 503 with aplurality of organic compound layers is formed between an anode 501 anda cathode 502 as shown in FIG. 5. Specifically, a hole injection layer504 for improving injection of holes from the anode 501 is formed on theanode 501, and a hole transporting layer 505 for improvingtransportation of the injected holes is formed on the hole injectionlayer 504.

A mixed layer (1) 507 is formed by coevaporation using the material thatconstitutes the hole transporting layer 505 and the material thatconstitutes a light emitting layer 506. The coevaporation is carried outin the manner described above. At this point, the mixed layer (1) 507may have concentration gradient.

By providing the mixed layer (1) 507, the energy barrier between thehole transporting layer 505 and the light emitting layer 506 can berelaxed. Therefore more holes can be injected from the hole transportinglayer 505 to the light emitting layer 506.

The light emitting layer 506 is formed on the mixed layer (1) 507. Inthe case of the laminate structure of the organic compound layer shownin Embodiment Mode 2, the organic compound forming the light emittinglayer is formed from a material that emits light by utilizing energydischarged in returning from triplet excitation to base state. Thereforethe light emitting layer is formed by coevaporation of a host materialand a triplet light emission material (dopant) that is lower inexcitation energy than the host material.

On the light emitting layer 506, a hole blocking layer 508 is formed.The hole blocking layer 508 has functions of preventing the holesinjected from the hole transporting layer 505 to the light emittinglayer 506 from passing the light emitting layer, and of preventingmolecular excitons generated as a result of recombination of the holesand electrons in the light emitting layer 506 from diffusing from thelight emitting layer 506.

On the hole blocking layer 508, a mixed layer (2) 510 is formed bycoevaporation using the material for forming the hole blocking layer 508and the material for forming an electron transporting layer 509. It ispreferable for the mixed layer (2) 510 to have concentration gradientsimilar to the mixed layer (1) 507.

On the mixed layer (2) 510, the electron transporting layer 509 isformed by evaporation and then the cathode 502 is formed by evaporationor sputtering to complete the organic light emitting element.

The organic light emitting element shown above has a structure in whichmixed layers are provided at interfaces of organic compound layers(specifically, the interface between the light emitting layer 506 andthe hole transporting layer 505, and the interface between the holeblocking layer 508 and the electron transporting layer 509). By givingthe organic light emitting element with this structure, injection ofholes from the hole transporting layer 505 to the light emitting layer506 and injection of electrons from the electron transporting layer 509to the hole blocking layer 508 are improved to enhance recombination ofcarriers in the light emitting layer.

The organic light emitting element with the structure shown inEmbodiment Mode 2 is suitable to a case in which a triplet lightemission material is used in a light emitting layer. However, it is notnecessary to limit thereto and it can also be employed when an organiccompound that emits light by utilizing singlet excitation energy isused. Appropriate triplet light emission materials are the metal complexwith platinum as central metal which is introduced in Reference 7, themetal complex with iridium as central metal which is introduced inReference 8, and the like.

Embodiment Mode 3

Embodiment Mode 3 gives a description with reference to FIG. 6 in a caseof manufacturing an organic light emitting element with an elementstructure different from the one shown in Embodiment Mode 1 orEmbodiment Mode 2.

The description given in Embodiment Mode 3 is a case in which an organiclight emitting element has an organic compound layer 603 between ananode 601 and a cathode 602 and mixed layers are formed at interfacesbetween injecting layers and transporting layers in the organic compoundlayer.

In Embodiment Mode 3, the organic compound layer 603 has a structure inwhich a plurality of organic compound layers are laminated.Specifically, a hole injecting layer 604 for improving injection ofholes from the anode 601 is formed on the anode 601.

In this embodiment mode, a mixed layer (1) 606 is formed here bycoevaporation using the material that constitutes the hole injectionlayer 604 and the material that constitutes a hole transporting layer605. The hole transporting layer 605 is formed on the mixed layer (1)606.

By providing the mixed layer (1) 606, the energy barrier between thehole injection layer 604 and the hole transporting layer 605 can belowered. Therefore more holes can be injected from the hole transportinglayer 605 to a light emitting layer 607. At this point, the mixed layer(1) 606 may have concentration gradient.

The light emitting layer 607 is formed on the hole transporting layer605. Further, an electron transporting layer 608 is formed on the lightemitting layer 607.

Then a mixed layer (2) 610 is formed by coevaporation using the materialfor forming the electron transporting layer 608 and the material forforming an electron injection layer 609. It is referable for the mixedlayer (2) 610 to have concentration gradient similar to the mixed layer(1) 606. The electron injection layer 609 is formed on the mixed layer(2) 610.

After the electron injection layer 609 is formed by evaporation, thecathode 602 is formed by evaporation or sputtering to complete theorganic light emitting element.

The organic light emitting element shown above has a structure in whichmixed layers are provided at interfaces between injecting layers andtransporting layers (specifically, the interface between the holeinjecting layer and the hole transporting layer and the interfacebetween the electron transporting layer and the electron injectinglayer). By giving the organic light emitting element with thisstructure, the mobility of injected carriers in the organic compoundlayers is improved while the mixed layers lower the energy barriers toreduce the interfaces substantially. Therefore the above structure isadvantageous in that carrier recombination is enhanced.

Modes required in carrying out the present invention will further bedescribed below. In an organic light emitting element, at least one ofanode and cathode is transparent in order to extract emitted light tothe outside. According to the element structure of this embodiment mode,a transparent anode is formed on a substrate to take the light out fromthe anode. However, the present invention can also adopt a structure fortaking the light out from a cathode and a structure for taking the lightout from the side reverse to the substrate.

In carrying out the present invention, the process of manufacturing anorganic light emitting element becomes important to avoid formation ofimpurity layers. Therefore a method of manufacturing an organic lightemitting device according to the present invention is described first.

FIG. 23A is a top view of evaporation apparatus. The apparatus is ofsingle chamber type in which one vacuum tank 1110 is set as anevaporation chamber and a plurality of evaporation sources are providedin the vacuum tank. Stored in the plural evaporation sourcesrespectively are materials with different functions, including a holeinjecting material, a hole transporting material, an electrontransporting material, an electron injecting material, a blockingmaterial, a light emitting material, and a material for forming acathode.

In the evaporation apparatus with this evaporation chamber, a substratewith an anode (formed of ITO or the like) is brought into a loadingchamber. If the anode is an oxide such as ITO, oxidation treatment isperformed in a pretreatment chamber (although not shown in FIG. 23A, theapparatus may be provided with an ultraviolet ray irradiation chamber toclean the anode surface). All of the materials that form the organiclight emitting element are subjected to evaporation in the vacuum tank11110. The cathode can be formed in the vacuum tank 11110 or may beformed in a separate evaporation chamber instead. In short, it issufficient if layers before forming the cathode are formed in a singlevacuum tank 11110 by evaporation. Lastly, sealing is conducted in asealing chamber and the substrate is taken out of an unloading chamberto obtain the organic light emitting element.

The procedure of manufacturing an organic light emitting elementaccording to the present invention using the single chamber typeevaporation apparatus as this will be described with reference to FIG.23B (a sectional view of the vacuum tank 11110). Shown in FIG. 23B asthe simplest example is a process of forming an organic compound filmthat contains a hole transporting material 11121, an electrontransporting material 11122, and a light emitting material 11123 usingthe vacuum chamber 11110 that has three evaporation sources (an organiccompound evaporation source a 11116, an organic compound evaporationsource b 11117, and an organic compound evaporation source c 11118).

First, a substrate 11101 with an anode 11102 is brought into the vacuumtank 11110 and is fixed by a fixing base 11111 (usually, the substrateis rotated during evaporation). Next, the pressure in the vacuum tank11110 is reduced (preferably to 10⁻⁴ pascal or lower) and then acontainer a 11112 is heated to evaporate the hole transporting material11121. When a given evaporation rate (unit: Å/s) is reached, a shutter a11114 is opened to start deposition by evaporation.

After a hole transporting region 11103 reaches to a given thickness,evaporation of the light emitting material 11123 is started while thehole transporting material 11121 is kept evaporated to form a firstmixed region 11105 (corresponding to the state shown in FIG. 23B). Ifthe first mixed region 11105 is to have concentration gradient, theshutter a 11114 is gradually closed to decrease the evaporation rate ofthe hole transporting material.

Then the shutter a 11114 is closed completely to end evaporation of thehole transporting material 11121 and form a light emitting regionconsisting of the light emitting material 11123. At this point, acontainer b 11113 is heated with a shutter b 11115 closed.

After the light emitting region reaches to a given thickness, theshutter b 11115 is opened and evaporation of the electron transportingmaterial 11122 is started to form a second mixed region. If the secondmixed region is to have concentration gradient, the evaporation rate ofthe light emitting material 11123 is gradually reduced.

Lastly, evaporation of the light emitting material 11123 is ended and anelectron transporting region consisting of the electron transportingmaterial 11122 is formed. The above operations are successivelyconducted without any interval and therefore no impurity layers areformed in any region.

All of the organic light emitting elements described in ‘Summary of theInvention’ can be manufactured by application of this method. Forinstance, in manufacturing the element as FIG. 22 which includes a lightemitting material as guest in relation to a host material, anevaporation source for evaporation of the host material is added to thecomponents of FIG. 23B. The host material is used in forming the mixedregion and in forming the light emitting region whereas the lightemitting material is evaporated in a minute amount to dope the hostmaterial during evaporation of the host material (during formation ofthe light emitting region, to be strict).

In the case where a hole injecting region or an electron injectingregion is formed, an evaporation source for the injecting material isset in the same vacuum tank 11110. For example, if a hole injectingregion is formed by evaporation between the anode 11102 and the holetransporting region 11105 in FIG. 23B, the hole transporting material11121 is evaporated immediately after the hole injecting material isdeposited by evaporation on the anode 11102. Formation of impuritylayers is thus avoided.

Listed below are materials which are preferable as the hole injectingmaterial, the hole transporting material, the electron transportingmaterial, the electron injecting material, and the light emittingmaterial. However, materials usable for art organic light emittingelement of the present invention are not limited thereto.

Effective hole injecting materials are, within confines of organiccompounds, porphyrin-based compounds, and phthalocyanine (hereafter,H₂Pc) and copper phthalocyanine (hereafter, CuPc) are often used. Amongpolymers, polyvinyl carbazole (hereafter, PVK) is effective as well asthe aforementioned materials obtained by performing chemical doping onconjugate system conductive polymers. Examples of these polymers includepolyethylene dioxythiophene (hereafter, PEDOT) doped with polystyrenesulfonic acid (hereafter, PSS), and polyaniline, or polypyrrole, dopedwith iodine or other Lewis acid. A polymer that is an insulator is alsoeffective in terms of planarization of the anode, and polyimide(hereafter, PI) is often used. Effective materials are also found amonginorganic compounds, and examples thereof include a thin film of gold,platinum or like other metals and a very thin film of aluminum oxide(hereinafter referred to alumina).

Materials most widely used as the hole transporting material arearomatic amine-based (namely, those with a benzene ring-nitrogen bond)compounds. Of them, particularly widely used are:4,4′-bis(diphenylamino)-biphenyl (hereafter, TAD); its derivative,namely, 4,4′-bis[N-(3-methylphenyl)-N-phenyl-amino]-biphenyl (hereafter,TPD); and 4,4′-bis-[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (hereafter,α-NPD). Also used are star burst aromatic amine compounds, including:4,4′,4″-tris (N,N-diphenyl-amino)-triphenyl amine (hereafter, TDATA);and 4,4′, 4″-tris [N-(3-methylphenyl)-N-phenyl-amino]-triphenyl amine(hereafter, MTDATA).

Metal complexes are often used as the electron transporting material.Examples thereof include: metal complexes having quinoline skeleton orbenzoquinoline skeleton, such as the aforementioned Alq, tris(4-methyl-8-quinolinolate) aluminum (hereafter, Almq), andbis(10-hydroxybenzo[h]-quinolinate) beryllium (hereafter, Bebq); andbis(2-methyl-8-quinolinolate)-(4-hydroxy-biphenylil)-aluminum(hereafter, BAlq) that is a mixed ligand complex. The examples alsoinclude metal complexes having oxazole-based and thiazole-based ligandssuch as bis[2-(2-hydroxypheyl)-benzooxazolate]zinc (hereafter, Zn(BOX)₂)and bis[2-(2-hydroxypheyl)-benzothiazolate]zinc (hereafter, Zn(BTZ)₂).Other materials that are capable of transporting electrons than themetal complexes are: oxadiazole derivatives such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (hereafter,PBD) and 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-il]benzene(hereafter, OXD-7); triazole derivatives such as5-(4-biphenylyl)-3-(4-tert-butylphenyl)-4-phenyl-1,2,4-triazole(hereafter, TAZ) and5-(4-biphenylyl)-3-(4-tert-butylphenyl)-4-(4-ethylpheyl)-1,2,4-triazole(hereafter, p-EtTAZ); and phenanthroline derivatives such asbathophenanthroline (hereafter, BPhen) and bathocupuroin (hereafter,BCP).

The electron transporting material given above can be used as theelectron injecting material. Other than those, a very thin film of aninsulator, including alkaline metal halides such as lithium fluoride andalkaline metal oxides such as lithium oxide, is often used. Alkalinemetal complexes such as lithium acetyl acetonate (hereafter, Li(acac))and 8-quinolinolate-lithium (hereafter, Liq) are also effective.

Materials effective as the light emitting material are variousfluorescent pigments, in addition to the aforementioned metal complexesincluding Alq, BeBq, BAlq, Zn(BOX)_(Z), and Zn(BTZ)₂. Examples offluorescent pigments include 4,4′-bis(2,2-diphenyl-vinyl)-biphenyl(hereafter, DPVBi) that is blue, and4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostylyl)-4H-pyran(hereafter, DCM) that is reddish orange. Triplet light emissionmaterials may also be used and the mainstream thereof are complexes withplatinum or iridium as central metal. Known triplet light emissionmaterials include tris (2-phenylpyridine) iridium (hereafter, Ir(ppy)₃)and 2, 3, 7, 8, 12, 13, 17, 18-octaethyl-21H,23H-porphyrin-platinum(hereafter, PtOEP).

The above materials of respective functions are combined to constitutean organic light emitting element of the present invention, whereby anorganic light emitting element that is lower in drive voltage and longerin element lifetime than conventional ones can be manufactured.

Embodiment 1

This embodiment describes a case of forming the organic light emittingelement that has the structure shown in Embodiment Mode 1. Thedescription of this embodiment is given with reference to FIG. 4.

An indium tin oxide (ITO) film or a transparent conductive film obtainedby mixing 2 to 20% of zinc oxide (ZnO) with indium oxide is used for ananode 401, which is a component of the organic light emitting element.The thickness of the anode 401 is preferably 80 to 200 nm in thisembodiment.

On the anode 401, a hole injecting layer 404 is formed. Aphthalocyanine-based material such as copper phthalocyanine (CuPc) ornonmetal phthalocyanine (H₂Pc) is used for the hole injecting layer 404.In this embodiment, the hole injecting layer 404 is formed from copperphthalocyanine. The thickness of the hole injecting layer 404 ispreferably 10 to 30 nut.

After the hole injecting layer 404 is formed, a hole transporting layer405 is formed. An aromatic amine-based material such as4,4′-bis-[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (α-NPD), or1,1-bis[4-bis(4-methyl phenyl)-amino-phenyl]cyclohexane (TPAC), or 4,4′,4″-tris [N-(3-methylphenyl)-N-phenyl-amino]-triphenyl amine (MTDATA) canbe used as the hole transporting layer 405 of this embodiment. In thisembodiment, the hole transporting layer 405 is formed from α-NPD to havea thickness of 30 to 60 nm.

A mixed layer (1) 407 is formed next. The mixed layer (1) 407 is formedfrom α-NPD used to form the hole transporting layer 405 and Alq₃ used toform a light emitting layer 406 by coevaporation. The thickness of themixed layer (1) 407 is preferably 1 to 10 nm.

Next, the light emitting layer 406 is formed. The light emitting layer406 is formed from Alq₃ by evaporation. The thickness of the lightemitting layer 406 is preferably 30 to 60 nm.

According to the structure of the organic light emitting element in thisembodiment, the light emitting layer has to be formed from a materialwith lower excitation energy than the materials of the hole transportinglayer 405 and the material of the electron transporting layer 408.Otherwise, the material of the light emitting layer has to be doped witha dopant which has a low excitation energy.

For the material to form the light emitting layer 406 of thisembodiment, in addition to Alq₃, Alpq₃ is suitable, which is obtained byintroducing a phenyl group to Alq₃. As the dopant used in doping to thelight emitting layer, known materials including perylene, rubrene,coumarine,4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostylyl)-4H-pyran (DCM),and quinacrydon can be employed.

A mixed layer (2) 409 is formed next. The mixed layer (2) 409 is formedfrom Alq, or Alpq₃ used to form the light emitting layer 406 and thematerial used to form an electron transporting layer 408 bycoevaporation. The thickness of the mixed layer (2) 409 is preferably 1to 10 nm.

Next, the electron transporting layer 408 is formed. 1,3,4-oxadiazolederivatives, 1,2,4-triazole derivatives, or the like can be used here.Specifically, materials usable as the electron transporting layerinclude: 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD);2,5-(1,1′-dinaphthyl)-1,3,4-oxadiazole (BND);1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-il]benzene (OXD-7);and 3-(4-tert-butylphenyl)-4-phenyl-5-(4-biphenylyl)-1,2,4-triazole(TAZ). The thickness of the electron transporting layer 408 ispreferably 30 to 60 nm.

After all of the above films are formed, a cathode of the organic lightemitting element is formed by evaporation. In this embodiment, MgAg isused as a conductive film that constitutes the cathode of the organiclight emitting element. However, a Al film or Yb film can be used aswell as a Al:Li alloy film (an alloy film of aluminum and lithium) or afilm obtained by coevaporation of aluminum and an element belonging toGroup 1 or 2 in the periodic table.

Embodiment 2

This embodiment describes a case of forming the organic light emittingelement that has the structure shown in Embodiment Mode 2. Thedescription of this embodiment is given with reference to FIG. 5.

An indium tin oxide (ITO) film or a transparent conductive film obtainedby mixing 2 to 20% of zinc oxide (ZnO) with indium oxide is used for ananode 501, which is a component of the organic light emitting element.The thickness of the anode 501 is preferably 80 to 200 nm in thisembodiment.

On the anode 501, a hole injecting layer 504 is formed. Aphthalocyanine-based material such as copper phthalocyanine (CuPc) ornonmetal phthalocyanine (H₂Pc) is used for the hole injecting layer 504.In this embodiment, the hole injecting layer 504 is formed from copperphthalocyanine. The thickness of the hole injection layer 504 ispreferably 10 to 30 nm.

After the hole injection layer 504 is formed, a hole transporting layer505 is formed. An aromatic amine-based material such as α-NPD, TPAC, orMTDATA can be used for the hole transporting layer 505 of thisembodiment. In this embodiment, the hole transporting layer 505 isformed by laminating MTDATA and α-NPD to have a thickness of 30 to 60nm. The MTDATA film (lower layer) is formed on the hole transportinglayer 505 to have a thickness of 10 to 20 nm, and then the α-NPD film(upper layer) is formed thereon to have a thickness of 5 to 20 nm.

A mixed layer (1) 507 is formed next. The mixed layer (1) 507 is formedby coevaporation, from α-NPD used to form the upper layer of the holetransporting layer 505 and 4,4′-N,N′-dicarbazole-biphenyl (CBP) and tris(2-phenylpyridine) iridium (Ir(ppy)₃) that are used to form a lightemitting layer 506. The thickness of the mixed layer (1) 507 ispreferably 1 to 10 nm.

Next, the light emitting layer 506 is formed. The light emitting layer506 is formed from CBP as the dopant and an iridium complex (Ir(ppy)₃)as the host material by coevaporation. The host material may be aplatinum complex instead of an iridium complex. The thickness of thelight emitting layer 506 is preferably 10 to 30 nm.

On the light emitting layer 506, a hole blocking layer 508 is formed. Inthis embodiment, the hole blocking layer 508 is formed from BCP to havea thickness of 10 to 30 nm.

A mixed layer (2) 510 is formed next. The mixed layer (2) 510 is formedfrom BCP used to form the hole blocking layer 508 and Alq₃ used to forman electron transporting layer 509 by coevaporation. The thickness ofthe mixed layer (2) 510 is preferably 1 to 10 nm.

Next, the electron transporting layer 509 is formed. Alg₃, Alpq₃, or thelike can be used here. In this embodiment, the electron transportinglayer 509 is formed from Alq₃ to have a thickness of 30 to 60 nm.

After all of the above films are formed, a cathode 502 of the organiclight emitting element is formed by evaporation. In this embodiment,MgAg is used as a conductive film that constitutes the cathode 502 ofthe organic light emitting element. However, a Al film or Yb film can beused as well as a Al—Li alloy film (an alloy film of aluminum andlithium) or a film obtained by coevaporation of aluminum and an elementbelonging to Group 1 or 2 in the periodic table. The cathode 502 in thisembodiment has a thickness of 100 to 500 nm.

In the case of the element structure according to this embodiment, it isparticularly preferable to use a triplet light emission material as thelight emitting layer.

Embodiment 3

This embodiment describes a case of forming the organic light emittingelement that has the structure shown in Embodiment Mode 3. Thedescription of this embodiment is given with reference to FIG. 6.

An indium tin oxide (ITO) film or a transparent conductive film obtainedby mixing 2 to 20% of zinc oxide (ZnO) with indium oxide is used for ananode 601 of the organic light emitting element. The thickness of theanode 601 is preferably 80 to 200 nm in this embodiment.

On the anode 601, a hole injecting layer 604 is formed. Aphthalocyanine-based material such as copper phthalocyanine (CuPc) ornonmetal phthalocyanine (H₂Pc) is used for the hole injecting layer 604.In this embodiment, the hole injecting layer 604 is formed from copperphthalocyanine. The thickness of the hole injecting layer 604 ispreferably 10 to 30 nm in this embodiment.

A mixed layer (1) 606 is formed next. The mixed layer (1) 606 is formedby coevaporation, from copper phthalocyanine used to form the holeinjecting layer 604 and α-NPD used to form a hole transporting layer605. The thickness of the mixed layer (1) 606 is preferably 1 to 10 nm.

After the mixed layer (1) 606 is formed, the hole transporting layer 605is formed. An aromatic amine-based material such as α-NPD, TPAC, orMTDATA can be used for the hole transporting layer 605 of thisembodiment. In this embodiment, the hole transporting layer 605 isformed from α-NPD to have a thickness of 30 to 60 nm.

Next, a light emitting layer 607 is formed. The light emitting layer 607is formed from Alg₃ by evaporation. The thickness of the light emittinglayer 607 here is 30 to 60 nm.

Next, an electron transporting layer 608 is formed. 1,3,4-oxadiazolederivatives, 1,2,4-triazole derivatives, or the like can be used here.Specifically, materials usable as the electron transporting layerinclude PBD, BND, OXD-7, and TAZ. The thickness of the electrontransporting layer 608 is 30 to 60 nm.

A mixed layer (2) 610 is formed next. The mixed layer (2) 610 is formedfrom TAZ used to form the electron transporting layer 608 and thematerial used to form an electron injection layer 609 by coevaporation.The thickness of the mixed layer (2) 610 is preferably 1 to 10 nm.

The electron injecting layer 609 is formed on the mixed layer (2) 610.Alq₃, Alpq₃, or the like can be used here. In this embodiment, theelectron injection layer 609 is 30 to 60 nm in thickness.

After all of the above films are formed, a cathode of the organic lightemitting element is formed by evaporation. In this embodiment, MgAg isused for a conductive film that constitutes the cathode of the organiclight emitting element. However, a Al film or Yb film can be used aswell as a Al—Li alloy film (an alloy film of aluminum and lithium) or afilm obtained by coevaporation of aluminum and an element belonging toGroup 1 or 2 in the periodic table.

Embodiment 4

Described next is an example of a method of manufacturing, at the sametime on the same substrate, TFTs for a pixel portion having an organiclight emitting element of the present invention and TFFs (an n-channelTFT and a p-channel TFT) for a driving circuit that is provided in theperiphery of the pixel portion. The description will be given withreference to FIGS. 7A to 9C.

First, this embodiment uses a substrate 900 made of barium borosilicateglass, typically Corning #7059 glass and #1737 glass (products ofCorning Incorporated), or alumino borosilicate glass. No limitation isput to the material of the substrate 900 as long as it islight-transmissive, and a quartz substrate may be used. A plasticsubstrate may also be used if it can withstand heat at the processtemperature of this embodiment.

Next, as shown in FIG. 7A, a base film 901 is formed on the substrate900 from an insulating film such as a silicon oxide film, a siliconnitride film, and a silicon oxynitride film. In this embodiment, thebase film 901 has a two-layer structure but it may be a single layer ora laminate of the above insulating films. The first layer of the basefilm 901 is a silicon oxynitride film 901 a formed by plasma CVD usingas reaction gas SiH₄, NH₃, and N₂O to have a thickness of 10 to 200 nm(preferably 50 to 100 nm). In this embodiment, the silicon oxynitridefilm 901 a (composition ratio: Si=32%, O=27%, N=24%, H=17%) is 50 nm inthickness. The second layer of the base film 901 is a silicon oxynitridefilm 901 b formed by plasma CVD using as reaction gas SiH₄ and N₂O tohave a thickness of 50 to 200 nm (preferably 100 to 150 mm). In thisembodiment, the silicon oxynitride film 901 b (composition ratio:Si=32%, O=59%, N=7%. H=2%) is 100 nm in thickness.

On the base film 901, semiconductor layers 902 to 905 are formed. Thesemiconductor layers 902 to 905 are formed by patterning into a desiredshape a crystalline semiconductor film that is obtained by forming asemiconductor film with an amorphous structure through a known method(sputtering, LPCVD, or plasma CVD) and then by subjecting the amorphousfilm to a known crystallization treatment (laser crystallization,thermal crystallization, or thermal crystallization using nickel orother catalyst). The semiconductor layers 902 to 905 are each 25 to 80nm in thickness (preferably 30 to 60 nm). Although the material of thecrystalline semiconductor film is not limited, silicon, silicongermanium (Si_(x)Ge_(1-x) (X=0.0001 to 0.02)) alloy or the like ispreferred. In this embodiment, an amorphous silicon film with athickness of 55 nm is formed by plasma CVD and then a solutioncontaining nickel is held to the top face of the amorphous silicon film.The amorphous silicon film is dehydrated (at 500° C. for an hour), thensubjected to thermal crystallization (at 550° C. for four hours), andthen subjected to laser annealing treatment for improving crystallinity,thereby obtaining the crystalline silicon film. The crystalline siliconfilm receives patterning treatment by photolithography to form thesemiconductor layers 902 to 905.

After the semiconductor layers 902 to 905 are formed, the semiconductorlayers 902 to 905 may be doped with a minute amount of impurity element(boron or phosphorus) in order to control the threshold of the TFTs.

If laser crystallization is used to form the crystalline semiconductorfilm, a pulse oscillation type or continuous wave type excimer layer,YAG laser, or YVO₄ laser may be used. When using these lasers, it isappropriate to use an optical system to collect laser light emitted fromthe laser oscillator into a linear beam before irradiating thesemiconductor film. Although conditions of crystallization can be chosensuitably by an operator, preferred conditions are as follows. When anexcimer laser is used, the pulse oscillation frequency is set to 300 Hzand the laser energy density is set to 100 to 400 mJ/cm² (typically, 200to 300 mJ/cm²). When a YAG laser is employed, the second harmonicthereof is used, the pulse oscillation frequency is set to 30 to 300 Hz,and the laser energy density is set to 300 to 600 mJ/cm² (typically, 350to 500 mJ/cm²). The laser light collected into a linear shape is 100 to1000 μm in width, 400 μm, for example, and the entire surface of thesubstrate is irradiated with the beam. The overlapping ratio of thelinear laser light during irradiation is set to 50 to 90%.

Next, a gate insulating film 906 is formed to cover the semiconductorlayers 902 to 905. The gate insulating film 906 is an insulating filmcontaining silicon and formed by plasma CVD or sputtering to have athickness of 40 to 150 nm. In this embodiment, a silicon oxynitride film(composition ratio: Si=32%, O=59%, N=7%, H=2%) with a thickness of 110nm is formed by plasma CVD. The gate insulating film is not limited tothe silicon oxynitride film, of course, and may be a single layer or alaminate of other insulating films containing silicon.

When a silicon oxide film is used, plasma CVD is employed in whichelectric discharge is made using a mixture of TEOS (tetraethylorthosilicate) and O₂ and setting the reaction pressure to 40 Pa, thesubstrate temperature to 300 to 400° C., and the high frequency (13.56MHZ) power density to 0.5 to 0.8 W/cm². The thus formed silicon oxidefilm can provide excellent characteristics as a gate insulating film ifit receives subsequent thermal annealing at 400 to 500° C.

On the gate insulating film 906, a heat resistant conductive layer 907for forming gate electrodes is formed to have a thickness of 200 to 400nm (preferably 250 to 350 nm). The heat resistant conductive film 907may be a single layer or may take a laminate structure having aplurality of layers, such as a two-layer structure or a three-layerstructure, if necessary. The heat resistant conductive layer contains anelement selected from the group consisting of Ta, Ti, and W, or an alloyhaving the above elements as its ingredient, or an alloy film having theabove elements in combination. The heat resistant conductive layer isformed by sputtering or CVD. In order to lower the resistance, theconcentration of impurities contained in the layer is preferablyreduced. The oxygen concentration in particular, is preferably 30 ppm orless. In this embodiment, a W film with a thickness of 300 nm is formed.The W film may be formed by sputtering with W as the target, or bythermal CVD using tungsten hexafluoride (WF₆). Either way, the W filmhas to be low in resistance to use it as gate electrodes, and theresistivity of the W film is preferably set to 20 μΩcm or lower. Theresistivity of the W film can be reduced by increasing the crystal grainsize but, if there are too many impurity elements such as oxygen in theW film, crystallization is inhibited to raise the resistivity.Accordingly, when the W film is formed by sputtering, a W target with apurity of 99.9999% is used and a great care is taken not to allowimpurities in the air to mix in the W film during formation. As aresult, the W film can have a resistivity of 9 to 20 μΩcm.

The heat resistant conductive layer 907 may instead be a Ta film, whichsimilarly can be formed by sputtering. Ar is used as sputtering gas whenforming a Ta film. If an appropriate amount of Xe or Kr is added to thesputtering gas, the internal stress of the film to be formed is easedand thus the film is prevented from peeling off. The resistivity of a Tafilm in a phase is about 20 μΩcm and is usable for a gate electrode. Onthe other hand, the resistivity of a Ta film in β phase is about 180μΩcm and is not suitable for a gate electrode. A Ta film in a phase canreadily be obtained by forming a TaN film as a base of a Ta film becausea TaN film has a crystal structure approximate to that of the a phase Tafilm. Although not shown in the drawings, it is effective to form asilicon film doped with phosphorus (P) to have a thickness of about 2 to20 nm under the heat resistant conductive layer 907. This improvesadhesion to the conductive film formed thereon and prevents oxidation ofthe conductive film and, at the same time, prevents alkaline metalelements contained in a minute amount in the hat resistant conductivelayer 907 from diffusing into the first shape gate insulating film 906.In either case, the resistivity of the heat resistant conductive layer907 is preferably set to 10 to 50 μΩcm.

Next, resist masks 908 are formed using the photolithography technique.Then first etching treatment is conducted. In this embodiment, an ICPetching device is employed, CF₄ and Cl₂ are mixed as etching gas, and anRF (13.56 MHZ) power of 3.2 W/cm² is given at a pressure of 1 Pa togenerate plasma. The substrate side (sample stage) also receives an RF(13.56 MHZ) power of 224 mW/cm² so that a substantially negativeself-bias voltage is applied. Under these conditions, the etching rateof the W film is about 100 nm/min. On the basis of this etching rate,the time necessary to etch the W film is estimated. The estimated timeis extended by 20% and this is the etching time for the first etchingtreatment.

Through the first etching treatment, conductive layers 909 to 912 havinga first taper shape are formed. The angle of the tapered portions of theconductive layers 909 to 912 is 15 to 30°. In order to etch theconductive films without leaving any residue, over-etching is employedin which the etching time is prolonged by about 10 to 20%. The selectiveratio of the W film to the silicon oxynitride film (the gate insulatingfilm 906) is 2 to 4 (typically 3), and therefore a region where thesilicon oxynitride film is exposed is etched by about 20 to 50 nm by theover-etching treatment (FIG. 7B).

First doping treatment is conducted next to dope the semiconductorlayers with an impurity element of one conductivity type. An impurityelement giving the n type conductivity is used in this doping step. Themasks 908 that have been used to form the first shape conductive layersare left as they are, and the semiconductor layers are doped with animpurity element giving the n type conductivity by ion doping in aself-aligning manner while using the first taper shape conductive layers909 to 912 as masks. In the doping, the dose is set to 1×10¹³ to 5×10¹⁴atoms/cm² and the acceleration voltage is set to 80 to 160 keV in orderthat the impurity element giving the n type conductivity reaches thesemiconductor layers below the tapered portions at the edges of the gateelectrodes and below the gate insulating film 906 through the taperedportions and the gate insulating film. Used as the impurity element thatgives the n type conductivity is an element belonging to Group 15,typically, phosphorus (P) or arsenic (As). Here, phosphorus (P) is used.Through this ion doping, first impurity regions 914 to 917 are formed tocontain the impurity element that gives the n type conductivity in aconcentration of 1×10²⁰ to 1×10²¹ atoms/cm³ (FIG. 7C).

In this step, depending on the doping condition, the impurity may reachunder the first shape conductive layers 909 to 912 so that the firstimpurity regions 914 to 917 overlap the first shape conductive layers909 to 912.

Next, second etching treatment is conducted as shown in FIG. 7D. Thesecond etching treatment also uses the ICP etching device to etch at anRF power of 3.2 W/cm² (13.56 MHZ), a bias power of 45 mW/cm² (13.56MHZ), and a pressure of 1.0 Pa, while using a mixture gas of CF₄ and Cl₂as etching gas. Under these conditions, conductive layers 918 to 921having a second shape are formed. The conductive layers 918 to 921 havetapered portions at the edges and the thickness of the layers isgradually increased from the edges toward the inside. The bias powerapplied to the substrate side in the second etching treatment is lowerthan in the first etching treatment and the ratio of isotropic etchingis increased that much, thereby setting the angle of the taperedportions to 30 to 60°. The masks 908 are etched to lose the edges andbecome masks 922. In the step of FIG. 7D, the surface of the gateinsulating film 906 is etched by about 40 nm.

Then the semiconductor layers are doped with an impurity element thatgives the n type conductivity in a dose smaller than in the first dopingtreatment and at a high acceleration voltage. For example, theacceleration voltage is set to 70 to 120 keV and the dose is set to1×10¹³ atoms/cm² to form first impurity regions 924 to 927 withincreased impurity concentration and second impurity regions 928 to 931that are in contact with the first impurity regions 924 to 927. In thisstep, depending on the doping condition, the impurity may reach underthe second shape conductive layers 918 to 921 so that the secondimpurity regions 928 to 931 overlap the second shape conductive layers918 to 921. The impurity concentration in the second impurity regions isset to 1×10¹⁶ to 1×10¹⁸ atoms/cm³ (FIG. 8A).

Then as shown in FIG. 8B, impurity regions 933 (933 a and 933 b) and 934(934 a and 934 b) having the conductivity type reverse to the oneconductivity type are respectively formed in the semiconductor layers902 and 905 that are to form p-channel TFTs. In this case also, thesemiconductor layers are doped with an impurity element that gives the ptype conductivity while using as masks the second shape conductivelayers 918 and 921 to form the impurity regions in a self-aligningmanner. During this doping, the semiconductor layers 903 and 904 thatare to form n-channel TFTs are completely covered with resist masks 932.The impurity regions 933 and 934 here are formed by ion doping usingdiborane (B₂H₆). The concentration of the impurity element that givesthe p type conductivity in the impurity regions 933 and 934 is set to2×10²⁰ to 2×10²¹ atoms/cm³.

When looked at more closely, the impurity regions 933 and 934 can bedivided into two regions containing an impurity element that gives the ntype conductivity. Third impurity regions 933 a and 934 a contain theimpurity element that gives the n type conductivity in a concentrationof 1×10²⁰ to 1×10²¹ atoms/cm². Fourth impurity regions 933 b and 934 bcontain the impurity element that gives the n type conductivity in aconcentration of 1×10¹⁷ to 1×10²⁰ atoms/cm³. However, the third impurityregions have no problem in functioning as source regions and drainregions of p-channel TFTs if the concentration of the impurity elementgiving the p type conductivity in the impurity regions 933 b and 934 bis set to 1×10¹⁹ atoms/cm³ or higher, and if the third impurity regions933 a and 934 a contain the impurity element giving the p typeconductivity in a concentration 1.5 to 3 times higher than theconcentration of the impurity element that gives the n typeconductivity.

Thereafter, as shown in FIG. 8C, a first interlayer insulating film 937is formed on the second shape conductive layers 918 to 921 and the gateinsulating film 906. The first interlayer insulating film 937 may be asilicon oxide film, a silicon oxynitride film, a silicon nitride film,or a laminate having these films in combination. In either case, thefirst interlayer insulating film 937 is formed from an inorganicinsulating material. The thickness of the first interlayer insulatingfilm 937 is 100 to 200 nm. When a silicon oxide film is used for thefirst interlayer insulating film 937, plasma CVD is employed in whichelectric discharge is made using a mixture of TEOS and O₂ and settingthe reaction pressure to 40 Pa, the substrate temperature to 300 to 400°C., and the high frequency (13.56 MHZ) power density to 0.5 to 0.8W/cm². When a silicon oxynitride film is used for the first interlayerinsulating film 937, one formed by plasma CVD from SiH₄, N₂O, and NH₃,or one formed by plasma CVD from SiH₄ and N₂O is chosen. Film formationconditions in this case include setting the reaction pressure to 20 to200 Pa, the substrate temperature to 300 to 400° C., and the highfrequency (60 MHZ) power density to 0.1 to 1.0 W/cm². A siliconoxynitride hydrate film formed from SiH₄, N₂O, and H, may also be usedas the first interlayer insulating film 937. Similarly, a siliconnitride film can be formed by plasma CVD from SiH₄ and NH₃ as the firstinterlayer insulating film.

Then the impurity elements used in doping to give the is type and p typeconductivities in the respective concentrations are activated. Theactivation step is carried out by thermal annealing using an annealingfurnace. Other activation methods adoptable include laser annealing andrapid thermal annealing (RTA). The thermal annealing is conducted in anitrogen atmosphere with an oxygen concentration of 1 ppm or less,preferably 0.1 ppm or less, at 400 to 700° C., typically 500 to 600° C.In this embodiment, the substrate is subjected to heat treatment at 550°C. for four hours. However, if a plastic substrate weak against heat isused for the substrate 900, laser annealing is preferred.

Following the activation step, the atmosphere gas is changed to onecontaining 3 to 100% hydrogen and heat treatment is conducted at 300 to450° C. for one to twelve hours to thereby hydrogenate the semiconductorlayers. The hydrogenation step is to terminate dangling bonds containedin the semiconductor layers in 10¹⁶ to 10¹⁸ atoms/cm³, using thermallyexcited hydrogen. Alternatively, plasma hydrogenation (using hydrogenthat is excited by plasma) may be employed. In either case, the defectdensity in the semiconductor layers 902 to 905 is reduced desirably to10¹⁶ atoms/cm³ or lower and, to reduce the density to this level, about0.01 to 0.1 atomic % hydrogen is given.

A second interlayer insulating film 939 is formed next from an organicinsulating material to have an average thickness of 1.0 to 2.0 μm.Organic resin materials such as polyimide, acrylic, polyamide,polyimideamide, and BCB (benzocyclobutene) can be used. If polyimide ofthe type that is thermally polymerized after being applied to asubstrate is used, for example, the film is formed by burning thesubstrate in a clean oven at 300° C. If an acrylic is used, two-packtype is chosen. After the main component is mixed with the curing agent,the resin is applied to the entire surface of the substrate using aspinner, and then the substrate is pre-heated on a hot plate at 80° C.for 60 seconds to be burnt in a clean oven at 250° C. for 60 minutes,thereby forming the insulating film.

When the second interlayer insulating film 939 is thus formed from anorganic insulating material, the surface can be leveled satisfactorily.Also, the parasitic capacitance can be reduced since organic resinmaterials has low dielectric constant in general. However, organic resinmaterials are hygroscopic and it is therefore preferable to combine theorganic resin film with the silicon oxide film, or the siliconoxynitride film, or the silicon nitride film, formed as the firstinterlayer insulating film 937 as in this embodiment.

Thereafter, a resist mask having a given pattern is formed and contactholes are formed to reach impurity regions that serve as source regionsor drain regions in the respective semiconductor layers. The contactholes are formed by dry etching. In this case, a mixture gas of CF₄, O₂,and He is used as etching gas to etch the second interlayer insulatingfilm 939 formed of an organic resin material first. Then the etching gasis changed to CF₄ and O₂ to etch the first interlayer insulating film937. The etching gas is further switched to CHF₃ in order to raise theselective ratio with respect to the semiconductor layers, and the gateinsulating film 906 is etched to form the contact holes.

Then a wiring layer 940 that is a conductive metal film is formed bysputtering or vacuum evaporation. On the wiring layer 940, a separationlayer 941 is formed from a material that increases the selective ratiowith respect to the wiring layer and the etchant during etching. Theseparation layer 941 may be formed of an inorganic material such as anitride film and an oxide film, or from an organic resin such aspolyimide, polyamide, and BCB (benzocyclobutene). A metal material mayalso be used.

The separation layer 941 is patterned using a mask and then etched toform source wiring lines 942 to 945, drain wiring lines 946 to 948, andseparation portions 942 b to 948 b. In this specification, a structurecomposed of a separation layer and a wiring line is called a partitionwall. Though not shown in the drawings, the wiring lines in thisembodiment are a laminate consisting of a Ti film with a thickness of 50nm and an alloy film (alloy film of Al and Ti) with a thickness of 500nm.

Next, a transparent conductive film with a thickness of 80 to 120 nm isformed thereon and patterned to form a pixel electrode 949 (FIG. 9B). Inthis embodiment, an indium tin oxide (ITO) film or a transparentconductive film obtained by mixing 2 to 20% of zinc oxide (ZnO) withindium oxide is used for the transparent electrode.

The pixel electrode 949 overlaps and is in contact with a contact wiringline 923 that is electrically connected to the drain wiring line 946 a.Thus formed is an electric connection between the pixel electrode 949and a drain region of a current controlling TFT 963.

An organic compound layer 950, a cathode 951, and a passivation film 952will be formed next by evaporation as shown in FIG. 9B. Before formingthe organic compound layer 950, heat treatment is preferably performedon the pixel electrode 947 to remove moisture completely. The cathode ofthe organic light emitting element is a MgAg electrode in thisembodiment. However, other known materials may be used for the cathode.

The organic compound layer 950 has, in addition to a light emittinglayer, a plurality of layers such as a hole injection layer, a holetransporting layer, an electron transporting layer, an electroninjection layer, and a buffer layer in combination. Detaileddescriptions will be given below on the structure of the organiccompound layer employed in this embodiment.

In this embodiment, copper phthalocyanine is used for a hole injectionlayer whereas á-NPD is used for a hole transporting layer and the layersare respectively formed by evaporation. A mixed layer is formed fromcopper phthalocyanine and á-NPD by coevaporation at the interfacebetween the hole injection layer and the hole transporting layer. It isdesirable for the mixed layer formed here to have concentrationgradient.

A light emitting layer is formed next. In this embodiment, the lightemitting layer is formed from different materials to form organiccompound layers that emit light of different colors. The organiccompound layers formed in this embodiment respectively emit red light,green light, and blue light.

A light emitting layer that emits red light is formed from Mg, dopedwith DCM. Instead, N,N′-disalicylidene-1,6-hexanediaminato) zinc (▪)(Zn(salhn)) doped with(1,10-phenanthroline)-tris(1,3-diphenyl-propane-1,3-dionato) europium(▪) (Eu(DBM)₃(Phen)) that is an Eu complex may be used. Other knownmaterials may also be used.

A light emitting layer, that emits green light can be formed from CBPand Ir(ppy)₃ by coevaporation. It is preferable to form a hole blockinglayer from BCP in this case. An aluminum quinolilate complex (Alq₃) anda benzoquinolinolate beryllium (BeBq) may be used instead. The layer maybe formed from a quinolilate aluminum complex (Alq₃) using as dopantCoumarin 6, quinacridon, or the like. Other known materials may also beused.

A light emitting layer that emits blue light can be formed from DPVBithat is a distylyl derivative, N,N′-disalicyliden-1,6-hexanediaminato)zinc (▪) (Zn(salhn)) that is a zinc complex having an azomethinecompound as its ligand, or 4,4′-bis(2,2-diphenyl-vinyl)-biphenyl (DPVBi)doped with perylene. Other known materials may also be used.

In this embodiment, a mixed layer is formed at the interface between thehole transporting layer and the light emitting layer by coevaporation ofá-NPD that is the material of the previously formed hole transportinglayer and the above materials of the light emitting layer. It isdesirable for the mixed layer formed here to have concentrationgradient.

After the mixed layer is formed, an electron transporting layer isformed. 1,3,4-oxadiazole derivatives, 1,2,4-triazole derivatives (e.g.,TAZ), or the like can be used for the electron transporting layer. Inthis embodiment, a 1,2,4-triazole derivative (TAZ) is formed byevaporation to have a thickness of 30 to 60 nm.

Another mixed layer is formed at the interface between the lightemitting layer and the electron transporting layer by coevaporation fromthe above materials of the light emitting layer and the 1,2,4-triazolederivative (TAZ). It is desirable for the mixed layer formed here tohave concentration gradient.

Through the above steps, the organic compound layer having a laminatestructure with mixed layers placed at the interfaces is completed. Inthis embodiment, the organic compound layer 950 is 10 to 400 nm(typically 60 to 150 nm) in thickness (including the laminate organiccompound layers and the mixed layers), and the cathode 951 is 80 to 200nm (typically 100 to 150 nm) in thickness.

After the organic compound layer is formed, the cathode of the organiclight emitting element is formed by evaporation. In this embodiment,MgAg is used for a conductive film that constitutes the cathode of theorganic light emitting element. However, a Al:Li alloy film (an alloyfilm of aluminum and lithium) and a film obtained by coevaporation ofaluminum and an element belonging to Group 1 or 2 in the periodic tablemay also be used.

After the cathode 951 is formed, the passivation film 952 is formed. Byproviding the passivation film 952, the organic compound layer 950 andthe cathode 951 can be protected from moisture and oxygen. In thisembodiment, a silicon nitride film with a thickness of 300 nm is formedas the passivation film 952. The passivation film 952 may be formedcontinuously after the formation of the cathode 951 without exposing thesubstrate to the air.

Thus completed is a light emitting device having the structure shown inFIG. 9C. A portion 954 where the pixel electrode 949, the organiccompound layer 950, and the cathode 951 overlap corresponds to theorganic light emitting element.

A p-channel TFT 960 and an n-channel TFT 961 are TFTs of the drivingcircuit, and constitute a CMOS. A switching TFT 962 and a currentcontrolling TFT 963 are TFT of the pixel portion. The This of thedriving circuit and the TFTs of the pixel portion can be formed on thesame substrate.

In the case of a light emitting device using an organic light emittingelement, its driving circuit can be operated by a power supply having avoltage of 5 to 6V, 10 V, at most. Therefore, degradation of TFTs due tohot electron is not a serious problem. Also, smaller gate capacitance ispreferred for the TFTs since the driving circuit needs to operate athigh speed. Accordingly, in a driving circuit of a light emitting deviceusing an organic light emitting element as in this embodiment, thesecond impurity region 929 and the fourth impurity region 933 b of thesemiconductor layers of the TFTs preferably do not overlap the gateelectrode 918 and the gate electrode 919, respectively.

A light emitting panel with an organic light emitting element formed ona substrate is thus formed as shown in FIG. 9C.

After the light emitting panel is formed, the panel is sealed andelectrically connected to an external power supply through an FPC,thereby completing the light emitting device of the present invention.

The structure in this embodiment can be combined with any of the elementstructures in Embodiments 1 through 3.

Embodiment 5

This embodiment describes in detail a method of completing the lightemitting panel which has finished fabrication up through the step ofFIG. 9C in Embodiment 4 as the light emitting device. The descriptionwill be given with reference to FIGS. 10A and 10B.

FIG. 10A is a top view showing the organic light emitting element thathas been finished up through sealing. FIG. 10B is a sectional view takenalong the line A-A′ of FIG. 10A. Surrounded by dotted lines and denotedby 1001, 1002, and 1003 are a source side driving circuit, a pixelportion, and a gate side driving circuit, respectively. 1004 denotes acover member and 1005 denotes a seal member. A space 1007 is providedinside the seal member 1005.

1008 is a wiring line for sending signals that are inputted to thesource side driving circuit 1001 and the gate side driving circuit 1003.The wiring line 1008 receives video signals and clock signals from anFPC (flexible printed circuit) 1010 that serves as an external inputterminal. Although the FPC alone is shown here, a printed wiring board(PWB) may be attached to the FPC. In this specification, the term lightemitting device include not only a light emitting module with FPC or PWBattached to a light emitting panel but also a light emitting modulemounted with IC.

Next, the sectional structure will be described with reference to FIG.10B. Above a substrate 1000, the pixel portion 1002 and the gate sidedriving circuit 1003 are formed. The pixel portion 1002 is composed of aplurality of pixels each including a current controlling TFT 1011 and atransparent electrode 1012 that is electrically connected to a drain ofthe TFT. The gate side driving circuit 1003 is constructed using a CMOScircuit (see FIG. 9C) in which an n-channel TFT 1013 and a p-channel TFT1014 are combined.

The transparent electrode 1012 functions as the anode of the organiclight emitting element. An interlayer insulating film 1006 is formed oneach side of the transparent electrode 1012. On the transparentelectrode 1012, an organic compound layer 1016 and a cathode 1017 of theorganic light emitting element are formed.

The cathode 1017 functions also as a wiring line common to the pluralpixels, and is electrically connected to the FPC 1010 through aconnection wiring line 1009. All elements that are included in the pixelportion 1002 and the gate side driving circuit 1003 are covered with apassivation film 1018.

The cover member 1004 is bonded by the seal member 1005. A spacer formedof a resin film may be provided in order to secure the distance betweenthe cover member 1004 and the organic light emitting element. Anairtight space is provided inside the seal member 1005 and filled withinert gas such as nitrogen and argon. It is also effective to place anabsorbent, typically, barium oxide, in this airtight space.

The cover member may be glass, ceramics, plastics, or metals. However,the material of the cover member has to be light-transmissive when lightis emitted toward the cover member side. Plastics usable as the covermember include FRP (fiberglass-reinforced plastics), PVF (polyvinylfluoride), Mylar, polyester, and, acrylic.

By sealing the light emitting panel with the cover member and the sealmember in the manner described above, the organic light emitting elementis completely shut off to the outside and external substances thataccelerates degradation of the organic compound layer by oxidation, suchas moisture and oxygen, are prevented from entering the element.Accordingly, a light emitting device of high reliability can beobtained.

The structure in this embodiment can be embodied by freely combiningwith any of the structures in Embodiments 1 through 4.

Embodiment 6

This embodiment shows a specific example in which the first mixed region1708 and the second mixed region 1709 of the organic light emittingelement shown in FIG. 17 have concentration gradient.

First, ITO is formed to have a thickness of about 100 nm by sputteringto form the anode 1702 on the glass substrate 1701. The glass substrate1701 having the anode 1702 is brought into a vacuum tank as the oneshown in FIGS. 23A and 23B. In this embodiment, four evaporation sourcesare necessary in order to deposit by evaporation four kinds of materials(three kinds of organic compounds and a metal for forming a cathode).

First, the hole transporting region 1705 consisting solely of Spirodimer of TAD (hereinafter referred to as S-TAD) is formed to have athickness of 30 nm at an evaporation rate of 3 Å/s. Thereafter,evaporation of spiro dimer of DPVBi (hereinafter referred to as S-DPVBi)that is a light emitting material is started and the evaporation ratethereof is gradually increased.

The evaporation rate of S-TAD is gradually reduced immediately afterevaporation of S-DPVBi is started, whereby the first mixed region 1708having concentration gradient is formed. The first mixed region 1708 isto have a thickness of 10 nm. The rate of change in evaporation rate ofS-TAD and S-DPVBi is adjusted such that evaporation of S-TAD is endedand evaporation of S-DPVBi reaches a rate of 3 Å/s as the formation ofthe first mixed region is completed.

After the light emitting region 1706 composed of S-DPVBi is formed tohave a thickness of 20 nm, evaporation of Alq that is an electrontransporting material is started and the evaporation rate thereof isgradually increased. The evaporation rate of S-DPVBi is graduallyreduced immediately after evaporation of Alq is started, whereby thesecond mixed region 1709 having concentration gradient is formed. Thesecond mixed region 1709 is to have a thickness of 10 nm. The rate ofchange in evaporation rate of S-DPVBi and Alq is adjusted such thatevaporation of S-DPVBi is ended and evaporation of Alq reaches a rate of3 Å/s as the formation of the second mixed region is completed.

Then evaporation of Alq alone is continued in order to form the electrontransporting region 1707. The region is 30 nm in thickness. Lastly, aAl:Li alloy is deposited by evaporation to have a thickness of about 150nm as the cathode. Thus completed is an organic light emitting elementfor emitting light of blue color, which is originated from S-DPVBi.

Embodiment 7

This embodiment shows a specific example of the organic light emittingelement illustrated in FIG. 21B.

First, ITO is formed to have a thickness of about 100 nm by sputteringto form the anode 1702 on the glass substrate 1701. The glass substrate1701 having the anode 1702 is brought into a vacuum tank as the oneshown in FIGS. 23A and 23B. In this embodiment, five evaporation sourcesare necessary in order to deposit by evaporation five kinds of materials(three kinds of organic compounds and two kinds of metals).

First, the hole transporting region 1705 consisting solely of α-NPD isformed to have a thickness of 30 nm at an evaporation rate of 3 Å/s.While keeping the evaporation rate of α-NPD to 3 Å/s, evaporation of Alqthat is a light emitting material is started at an evaporation rate of 3Å/s. In other words, the first mixed region 1708 containing α-NPD andAlq at a ratio of 1:1 is formed by coevaporation. The first mixed regionis 10 nm in thickness.

As the first mixed region 1708 is completed, evaporation α-NPD is endedbut evaporation of Alq is continued to form the light emitting region1706. The light emitting region is 20 nm in thickness. Furthercontinuing evaporation of Alq, evaporation of BPhen that is an electrontransporting material is started at an evaporation rate of 3 Å/s. Inother words, the second mixed region 1709 containing Alq and Bphen at aratio of 1:1 is formed by coevaporation. The second mixed region is 10nm in thickness.

As the second mixed region 1709 is completed, evaporation of Alq isended but evaporation of BPhen is continued to form the electrontransporting region 1707 with a thickness of 30 nm. Further continuingevaporation of BPhen, about 1 wt % of Li is added to form the electroninjection region 1711. The electron injection region is 10 nm inthickness.

Lastly, an Al:Li alloy is deposited by evaporation to have a thicknessof about 150 nm as the cathode. Thus completed is an organic lightemitting element for emitting light of green color, which is originatedfrom Alq.

Embodiment 8

This embodiment shows a specific example of the organic light emittingelement illustrated in FIG. 22.

First, ITO is formed to have a thickness of about 100 nm by sputteringto form the anode 11002 on the glass substrate 11001. The glasssubstrate 11001 having the anode 11002 is brought into a vacuum tank asthe one shown in FIGS. 23A and 23B. In this embodiment, sevenevaporation sources are necessary in order to deposit by evaporationseven kinds of materials (five kinds of organic compounds and two kindsof metals).

First, CuPC as a hole injection material is deposited by evaporation tohave a thickness of 20 nm, thereby forming the hole injection region11010. As the CuPC film reaches 20 nm to end evaporation of CuPC,without an interval, evaporation of α-NPD that is a hole transportingmaterial is started at an evaporation rate of 3 Å/s. The reason forallowing no interval is, as described above, that formation of impuritylayers has to be avoided.

After the hole transporting region 11005 consisting solely of α-NPD isformed to have a thickness of 20 nm, evaporation of Alq that is a hostmaterial in relation to a light emitting material is started at anevaporation rate of 3 Å/s while keeping the evaporation rate of α-NPD to3 Å/s. In other words, the first mixed region 11008 containing α-NPD andAlq at a ratio of 1:1 is formed by coevaporation. The first mixed regionis 10 nm in thickness.

As the first mixed region 11008 is completed, evaporation α-NPD is endedbut evaporation of Alq is continued to form the light emitting region11006. The light emitting region is 20 nm in thickness. At this point,the light emitting region 11006 is doped with 1 wt % of DCM that is afluorescent pigment as the light emitting material 11012.

As the light emitting region 11006 is completed, evaporation of DCM isended but evaporation of Alq is further continued. At the same time,evaporation of BPhen that is an electron transporting material isstarted at an evaporation rate of 3 Å/s. In other words, the secondmixed region 11009 containing Alq and Bphen at a ratio of 1:1 is formedby coevaporation: The second mixed region is 10 nm in thickness.

As the second mixed region 11009 is completed, evaporation of Alq isended but evaporation of BPhen is continued to form the electrontransporting region 11007 with a thickness of 30 nm. Further continuingevaporation of BPhen, about 1 wt % of Li is added to form the electroninjection region 11011. The electron injection region is 10 nm inthickness.

Lastly, a Al:Li alloy is deposited by evaporation to have a thickness ofabout 150 nm as the cathode. Thus completed is an organic light emittingelement for emitting light of red color, which is originated from DCM.

Embodiment 9

This embodiment shows a specific example in which a triplet lightemission material is employed as the light emitting material 11012 ofthe organic light emitting element illustrated in FIG. 22.

First, ITO is deposited into a thickness of about 100 nm by sputteringto form an ITO electrode (anode) on the glass substrate. On the glasssubstrate, poly(3-hexyl)thiophen doped with iodine is formed into a filmwith a thickness of 20 nm by spin coating as the hole injecting region.Benzene is used as a solvent, and iodine is dissolved in the samesolvent for the doping. After the film is formed, benzene used as asolvent is removed by heating.

The substrate having the ITO electrode thus coated with a conductivepolymer material is brought into a vacuum tank as the one shown in FIGS.23A and 23B. In this embodiment, six evaporation sources are necessaryin order to deposit by evaporation six kinds of materials (five kinds oforganic compounds and a metal for forming a cathode). First, the holetransporting region consisting solely of α-NPD is formed at anevaporation rate of 3 Å/s to have a thickness of 40 nm. Thereafter,while keeping the evaporation rate of α-NPD to 3 Å/s, evaporation ofBAlq that is a host material in relation to the light emitting materialis started at an evaporation rate of 3 Å/s. In other words, the firstmixed region 11008 containing α-NPD and BAlq at a ratio of 1:1 is formedby coevaporation. The first mixed region 11008 is 10 nm in thickness.

As the first mixed region 11008 is completed, evaporation of α-NPD isended but evaporation of BAlq is continued to form the light emittingregion 11006. The light emitting region is 20 nm in thickness. At thispoint, the light emitting region 11006 is doped with 5 wt % of Ir(ppy)₃that is a triplet light emission material as the light emitting material11012.

As the light emitting region 11006 is completed, evaporation of Ir(ppy)₃is ended but evaporation of BAlq is further continued. At the same time,evaporation of Alq that is an electron transporting material is startedat an evaporation rate of 3 Å/s. In other words, the second mixed region1709 containing BAlq and Alq at a ratio of 1:1 is formed bycoevaporation. The second mixed region 1709 is 10 nm in thickness.

As the second mixed region 11009 is completed, evaporation of BAlq isended but evaporation of Alq is continued to form the electrontransporting region with a thickness of 30 mm. Then, Li(acac) isdeposited by evaporation to have a thickness of 2 nm as the electroninjection region.

Lastly, Al is deposited by evaporation to have a thickness of about 150nm as the cathode. Thus completed is a triplet light emitting elementfor emitting light of green color, which is originated from Ir(ppy)₃.

Embodiment 10

This embodiment describes a light emitting device that includes anorganic light emitting element according to the present invention. FIGS.24A and 24B are sectional views of an active matrix light emittingdevice that uses an organic light emitting element of the presentinvention.

A thin film transistor (hereinafter referred to as TFT) is used here asan active element, but the active element may be a MOS transistor. The 1shown as an example is a top gate TFT (planar TFT, to be specific), buta bottom gate TFT (typically a reverse stagger TFT) may be used instead.

In FIG. 24A, 11201 denotes a substrate. The substrate used here cantransmit visible light so that light is sent to the outside from thesubstrate side. Specifically, a glass substrate, a quartz substrate, acrystal glass substrate, or a plastic substrate (including a plasticfilm) can be used. The substrate 11201 refers to the substrate plus aninsulating film formed on the surface of the substrate.

On the substrate 11201, a pixel portion 11211 and a driving circuit11212 are provided. The pixel portion 11211 will be described first.

The pixel portion 11211 is a region for displaying an image. A pluralityof pixels are placed on the substrate, and each pixel is provided with aTFT 11202 for controlling a current flowing in the organic lightemitting element (hereinafter referred to as current controlling TFT), apixel electrode (anode) 11203, an organic compound film 11204, and acathode 11205. Although only the current controlling TFT is shown inFIG. 24A, each pixel has a TFT for controlling a voltage applied to agate of the current controlling TFT (hereinafter referred to asswitching TFT).

The current controlling TFT 11202 here is preferably a p-channel TFT.Though an n-channel TFT may be used instead, a p-channel TFT as thecurrent controlling TFT is more successful in reducing currentconsumption if the current controlling TFT is connected to the anode ofthe organic light emitting element as shown in FIGS. 24A and 24B. Notethat, the switching TFT may be formed by either an n-channel TFT or ap-channel TFT.

A drain of the current controlling TFT 11202 is electrically connectedto the pixel electrode 11203. In this embodiment, a conductive materialhaving a work function of 4.5 to 5.5 eV is used as the material of thepixel electrode 11203, and therefore the pixel electrode 11203 functionsas the anode of the organic light emitting element. A light-transmissivematerial, typically, indium oxide, tin oxide, zinc oxide, or a compoundof these (ITO, for example), is used for the pixel electrode 11203. Onthe pixel electrode 11203, the organic compound film 11204 is formed.

On the organic compound film 11204, the cathode 11205 is provided. Thematerial of the cathode 11205 is desirably a conductive material havinga work function of 2.5 to 3.5 eV. Typically, the cathode 11205 is formedfrom a conductive film containing an alkaline metal element or analkaline-earth metal element, or from a conductive film containingaluminum, or from a laminate obtained by layering an aluminum or silverfilm on one of the above conductive films.

A layer composed of the pixel electrode 11203, the organic compound film11204, and the cathode 11205 is covered with a protective film 11206.The protective film 11206 is provided to protect the organic lightemitting element from oxygen and moisture. Materials usable for theprotective film 11206 include silicon nitride, silicon oxynitride,aluminum oxide, tantalum oxide, and carbon (specifically, diamond-likecarbon).

Next, the driving circuit 11212 will be described. The driving circuit11212 is a region for controlling timing of signals (gate signals anddata signals) to be sent to the pixel portion 11211, and is providedwith a shift register, a buffer, and a latch, as well as an analogswitch (transfer gate) or level shifter. In FIG. 24A, the basic unit ofthese circuits is a CMOS circuit composed of an rt-channel TFT 11207 anda p-channel TFT 11208.

Known circuit structures can be applied to the shift register, thebuffer, the latch, and the analog switch (transfer gate) or levelshifter. Although the pixel portion 11211 and the driving circuit 11212are provided on the same substrate in FIGS. 24A and 24B, IC or LSI maybe electrically connected to the substrate instead of placing thedriving circuit 11212 on the substrate.

The pixel electrode (anode) 11203 is electrically connected to thecurrent controlling TFT 11202 in FIGS. 24A and 24B but the cathode maybe connected to the current controlling TFT instead. In this case, thepixel electrode is formed from the material of the cathode 11205 whereasthe cathode is formed from the material of the pixel electrode (anode)11203. The current controlling TFT in this case is preferably ann-channel TFT.

The light emitting device shown in FIG. 24A is manufactured by a processin which formation of the pixel electrode 11203 precedes formation of awiring line 11209. However, this process could roughen the surface ofthe pixel electrode 11203. The roughened surface of the pixel electrode11203 may degrade characteristic of the organic light emitting elementsince it is a current-driven type element.

Then the pixel electrode 11203 is formed after forming the wiring line11209 to obtain a light emitting device shown in FIG. 24B. In this case,injection of current from the pixel electrode 11203 can be improvedcompared to the structure of FIG. 24A.

In FIGS. 24A and 24B, a forward-tapered bank structure 11210 separatesthe pixels placed in the pixel portion 11211 from one another. If thisbank structure is reverse-tapered, a contact between the bank structureand the pixel electrode can be avoided. An example thereof is shown inFIG. 25.

In FIG. 25, a wiring line also serves as a separation portion, forming awiring line and separation portion 11310. The shape of the wiring lineand separation portion 11310 shown in FIG. 25 (namely, a structure witheaves) is obtained by layering a metal that constitutes the wiring lineand a material lower in etch rate than the metal (a metal nitride, forexample) and then etching the laminate. This shape can prevent shortcircuit between a cathode 11305 and a pixel electrode 11303 or thewiring line. Unlike a usual active matrix light emitting device, thecathode 11305 on the pixel is striped in the device of FIG. 25 (similarto a cathode in a passive matrix device).

FIG. 26A shows an example in which an electrode structure effective whena conductive polymer material is used for a hole injection region isintroduced to an active matrix light emitting device. A sectional viewthereof is shown in FIG. 26A. A top view of the electrode structure ineach pixel is shown in FIG. 26B. According to the illustrated structure,an anode in each pixel 11413 is not formed over the entire surface butis striped and slits are formed between stripes of a striped electrode11403.

When an organic compound film is directly formed on this structure, nolight is emitted from the slit where the electrode is not present.However, the entire surface of the pixel emits light if a coat ofconductive polymer 11414 is placed as shown in FIG. 26A. In other words,the conductive polymer 11414 forms a hole injection region and serves asan electrode at the same time.

A merit of the light emitting device as the one in FIGS. 26A and 26B isthat it is not necessary to use a transparent material for the anode11403. A sufficient amount of emitted light can be taken out if theaperture ratio of the slit is 80 to 90%. Moreover, the conductivepolymer 11414 forms a flat surface and therefore uniform electric fieldis applied to the organic compound film to lower the risk of breakdown.

FIGS. 27A and 27B show the exterior of the active matrix light emittingdevice illustrated in FIG. 24B. FIG. 27A is a top view thereof and FIG.27B is a sectional view taken along the line P-P′ of FIG. 27A. Thesymbols in FIGS. 24A and 24B are used in FIGS. 27A and 27B.

In FIG. 27A, 11501 denotes a pixel portion, 11502 denotes a gate signalside driving circuit, and 11503 denotes a data signal side drivingcircuit. Signals to be sent to the gate signal side driving circuit11502 and the data signal side driving circuit are inputted from a TAB(tape automated bonding) tape 11505 through an input wiring line 11504.Though not shown in the drawing, the TAB tape 11505 may be replaced by aTCP (tape carrier package) that is obtained by providing a TAB tape withan IC (integrated circuit).

Denoted by 11506 is the cover member that is provided in an upper partof the light emitting device shown in FIG. 24B, and is bonded with aseal member 11507 formed of a resin. The cover member 11506 may be anymaterial as long as it does not transmit oxygen and water. In thisembodiment, as shown in FIG. 27B, the cover member 11506 is composed ofa plastic member 11506 a and carbon films (specifically, diamond-likecarbon films) 11506 b and 11506 c that are formed on the front and backof the plastic member 11506 a, respectively.

As shown in FIG. 27B, the seal member 11507 is covered with a sealingmember 11508 made of a resin so that the organic light emitting elementis completely sealed in an airtight space 11509. The airtight space11509 is filled with inert gas (typically, nitrogen gas or noble gas), aresin, or inert liquid (for example, liquid fluorocarbon typical exampleof which is perfluoro alkane). It is also effective to put an absorbentor deoxidant in the space.

A polarizing plate may be provided on a display face (the face on whichan image is displayed to be observed by a viewer) of the light emittingdevice shown in this embodiment. The polarizing plate has an effect ofreducing reflection of incident light from the external to therebyprevent the display face from showing the reflection of a viewer.Generally, a circular polarizing plate is employed. However, it ispreferable for the polarizing plate to have a structure with lessinternal reflection by adjusting the index of refraction in order toprevent light emitted from the organic compound film from beingreflected at the polarizing plate and traveling backward.

Any of organic light emitting elements according to the presentinvention can be used as the organic light emitting element included inthe light emitting device of this embodiment.

Embodiment 11

This embodiment shows an active matrix light emitting device as anexample of a light emitting device that includes an organic lightemitting element according to the present invention. Unlike Embodiment5, in the light emitting device of this embodiment, light is taken outfrom the opposite side of a substrate on which an active element isformed (hereinafter referred to as upward emission). FIG. 28 is asectional view thereof.

A thin film transistor (hereinafter referred to as TFT) is used here asthe active element, but the active element may be a MOS transistor. TheTFT shown as an example is a top gate TFT (planar TFT, to be specific),but a bottom gate TFT (typically a reverse stagger TFT) may be usedinstead.

A substrate 11601, a current controlling TFT 11602 that is formed in apixel portion, and a driving circuit 11612 of this embodiment have thesame structure as those of Embodiment 5.

A first electrode 11603, which is connected to a drain of the currentcontrolling TFT 11602, is used as an anode in this embodiment, andtherefore is formed preferably from a conductive material having a largework function. Typical examples of the conductive material includemetals such as nickel, palladium, tungsten, gold, and silver. In thisembodiment, the first electrode 11603 desirably does not transmit light.More desirably, the electrode is formed from a material that is highlyreflective of light.

On the first electrode 11603, an organic compound film 11604 is formed.Provided on the organic compound film 11604 is a second electrode 11605,which serves as a cathode in this embodiment. Accordingly, the materialof the second electrode 11605 is desirably a conductive material havinga work function of 2.5 to 3.5 eV. Typically, a conductive filmcontaining an alkaline metal element or an alkaline-earth metal element,or a conductive film containing aluminum, or a laminate obtained bylayering an aluminum or silver film on one of the above conductive filmsis used. However, being light-transmissive is indispensable for thematerial of the second electrode 11605. Therefore, when used for thesecond electrode, the metal is preferably formed into a very thin filmabout 20 nm in thickness.

A layer composed of the first electrode 11603, the organic compound film11604, and the second electrode 11605 is covered with a protective film11606. The protective film 11606 is provided to protect the organiclight emitting element from oxygen and moisture. In this embodiment, anymaterial can be used for the protective film as lone as it transmitslight.

The first electrode (anode) 11603 is electrically connected to thecurrent controlling TFT 11602 in FIG. 28 but the cathode may beconnected to the current controlling TFT instead. In this case, thefirst electrode is formed from the material of the cathode whereas thesecond electrode is formed from the material of the anode. The currentcontrolling TFT in this case is preferably an n-channel TFT.

Denoted by 11607 is a cover member and is bonded with a seal member11608 formed of a resin. The cover member 11607 may be any material aslong as it transmits light but not oxygen and water. In this embodiment,glass is used. An airtight space 11609 is filled with inert gas(typically, nitrogen gas or noble gas), a resin, or inert liquid (forexample, liquid fluorocarbon typical example of which is perfluoroalkane). It is also effective to put an absorbent or deoxidant in thespace.

Signals to be sent to the gate signal side driving circuit and the datasignal side driving circuit are inputted from a TAB (tape automatedbonding) tape 11614 through an input wiring line 11613. Though not shownin the drawing, the TAB tape 11614 may be replaced by a TCP (tapecarrier package) that is obtained by providing a TAB tape with an IC(integrated circuit).

A polarizing plate may be provided on a display face (the face on whichan image is displayed to be observed by a viewer) of the light emittingdevice shown in this embodiment. The polarizing plate has an effect ofreducing reflection of incident light from the external to therebyprevent the display face from showing the reflection of a viewer.Generally, a circular polarizing plate is employed. However, it ispreferable for the polarizing plate to have a structure with lessinternal reflection by adjusting the index of refraction in order toprevent light emitted from the organic compound film from beingreflected at the polarizing plate and traveling backward.

Any of organic light emitting elements according to the presentinvention can be used as the organic light emitting element included inthe light emitting device of this embodiment.

Embodiment 12

This embodiment describes a case of applying the present invention to apassive (simple matrix) light emitting device. The description will begiven with reference to FIG. 11. In FIG. 11, 1301 denotes a glasssubstrate and 1302 denotes an anode formed from a transparent conductivefilm. In this embodiment, the transparent conductive film is a compoundof indium oxide and zinc oxide which is deposited by evaporation. Thoughnot shown in FIG. 11, plural strips of anodes are arranged in thedirection perpendicular to the plane of the drawing to form a stripepattern.

Banks (1303 a and 1303 b) are formed so as to fill gaps between anodes1302 arranged to form a stripe pattern. The banks (1303 a and 1303 b)are formed in the direction perpendicular to the plane of the drawingalong the anodes 1302.

An organic compound layer having a laminate structure is formed next. Inthis embodiment, copper phthalocyanine is first deposited by evaporationto have a thickness of 30 to 50 nm as a first organic compound layer1304.

Then á-NPD is deposited by evaporation to have a thickness of 30 to 60nm as a second organic compound layer 1305.

Further, a third organic compound layer 1306 is formed. To form thethird organic compound layer of this embodiment, a pixel 1306 a thatemits red light, a pixel 1306 b that emits green light, and a pixel 1306c that emits blue light are formed separately.

The pixel 1306 a that emits red light is formed first. The pixel 1306 athat emits red light is obtained by forming a film with a thickness of30 to 60 nm through coevaporation of Alq₃ and DCM using a metal mask.

The pixel 1306 b that emits green light is formed next. The pixel 1306 bthat emits green light is obtained by forming a film with a thickness of30 to 60 nm through evaporation of Alq₃ using a metal mask.

The pixel 1306 c that emits blue light is formed next. The pixel 1306 cthat emits blue light is obtained by forming a film with a thickness of30 to 60 nm through evaporation of BCP using a metal mask. At thispoint, an Alq₃ film may be layered on the BCE film.

In this embodiment also, mixed layers are formed between organic layers.Specifically, a first mixed layer is formed at the interface between thefirst organic compound layer and the second organic compound layer, anda second mixed layer is formed at the interface between the secondorganic compound layer and the third organic compound layer. The mixedlayers can be formed by the methods shown in Embodiment Modes.

An organic light emitting element that emits light of different colorsis obtained through the above steps. Since these organic compound layersare formed along grooves defined by the banks (1303 a and 1303 b), thelayers are arranged to form a stripe pattern in the directionperpendicular to the plane of the drawing.

Thereafter, though not shown in FIG. 11, plural strips of cathodes 1307are arranged with the direction parallel to the plane of the drawing setas the longitudinal direction so as to form a stripe pattern thatcrosses the anodes 1302 at right angles. The cathodes 1307 in thisembodiment are formed from MgAg by evaporation. Although not shown,wiring lines are led out of the cathodes 1307 to reach a portion towhich an FPC is attached later, so that a given voltage is applied tothe cathodes.

After the cathodes 1307 are formed, a silicon nitride film may be formedas a passivation film (not shown).

The organic light emitting element is formed on the substrate 1301 inthe manner described above. In this embodiment, the lower electrodesserve as light-transmissive anodes and therefore light generated by theorganic compound layers is emitted downward (toward the substrate 1301).However, the organic light emitting element may have the reversestructure and the lower electrodes may serve as light-shieldingcathodes. In this case, light generated by the organic compound layersis emitted upward (toward the opposite side of the substrate 1301).

Next, a ceramic substrate is prepared as a cover member 1308. In thestructure of this embodiment, the cover member does not need to belight-transmissive and therefore a ceramic substrate is used. When theorganic light emitting element has the reverse structure as describedabove, it is preferred for the cover member to be light-transmissive andtherefore a plastic or glass substrate is used.

The thus prepared cover member 1308 is bonded by a seal member 1310formed of a UV-curable resin. An airtight space 1309 is provided insidethe seal member 1310, and filled with inert gas such as nitrogen andargon. It is also effective to place an absorbent, typically, bariumoxide, in this airtight space 1309. Lastly, an anisotropic film (FPC)1311 is attached to complete the passive light emitting device.

This embodiment can be embodied by freely combining with any elementstructure for an organic light emitting element disclosed in the presentinvention.

Embodiment 13

This embodiment shows a passive matrix light emitting device as anexample of a light emitting device that includes an organic lightemitting element disclosed in the present invention. FIG. 29A is a topview thereof and FIG. 29B is a sectional view taken along the line P-P′of FIG. 29A.

In FIG. 29A, denoted by 11701 is a substrate, which is formed of aplastic material here. The plastic material, which can be used is aplate or film of polyimide, polyamide, an acrylic resin, an epoxy resin,PES (polyethylene sulfile), PC (polycarbonate), PET (polyethyleneterephthalate), or PEN (polyethylene naphthalate).

11702 denotes scanning lines (anodes) formed from a conductive oxidefilm. In this embodiment, the conductive oxide film is obtained bydoping zinc oxide with gallium oxide. 11703 denotes data lines(cathodes) formed from a metal film, a bismuth film, in this embodiment.11704 denotes banks formed of an acrylic resin. The banks function aspartition wails that separate the data lines 11703 from one another. Thescanning lines 11702 and the data lines 11703 respectively form stripepatterns and the patterns cross each other at right angles. Though notshown in FIG. 29A, an organic compound film is sandwiched between thescanning lines 11702 and the data lines 11703 and intersection portions11705 serve as pixels.

The scanning lines 11702 and the data lines 11703 are connected to anexternal driving circuit through a TAB tape 11707. 11708 denotes a groupof wiring lines comprised of a mass of the scanning lines 11702. 11709denotes a group of wiring lines comprised of a mass of connection wiringlines 11706 that are connected to the data lines 11703. Though notshown, the TAB tape 11707 may be replaced by TCP that is obtained byproviding a TAB tape with an IC.

In FIG. 29B, 11710 denotes a seal member and 11711 denotes a covermember that is bonded to a plastic member 11701 with the seal member11710. A photo-curable resin can be used for the seal member 11710. Apreferable material of the seal member is one which allows little gasleakage and which absorbs little moisture. The cover member ispreferably made from the same material as the substrate 11701, and glass(including quartz glass) or plastic can be used. Here, a plasticmaterial is used for the cover member.

FIG. 29C is an enlarged view of the structure of a pixel region 11712.11713 denotes an organic compound film. Lower layers of the banks 11704are narrower than upper layers and therefore the banks can physicallyseparate the data lines 11703 from one another. A pixel portion 11714surrounded by the seal member 11710 is shut off of the outside air by asealing member 11715 formed of a resin. Degradation of the organiccompound film is thus prevented.

In the light emitting device structured as above in accordance with thepresent invention, the pixel portion 11714 is composed of the scanninglines 11702, the data lines 11703, the banks 11704, and the organiccompound film 11713. Therefore the light emitting device can bemanufactured by a very simple process.

A polarizing plate may be provided on a display face (the face on whichan image is displayed to be observed by a viewer) of the light emittingdevice shown in this embodiment. The polarizing plate has an effect ofreducing reflection of incident light from the external to therebyprevent the display face from showing the reflection of a viewer.Generally, a circular polarizing plate is employed. However, it ispreferable for the polarizing plate to have a structure with lessinternal reflection by adjusting the index of refraction in order toprevent light emitted from the organic compound film from beingreflected at the polarizing plate and traveling backward.

Any of organic light emitting elements according to the presentinvention can be used as the organic light emitting element included inthe light emitting device of this embodiment.

Embodiment 14

This embodiment shows an example of full-color light emitting device.The full-color light emitting device in this embodiment refers to adevice that can show various colors using primary colors of light,namely, red, green, and blue.

The most typical method to obtain full-color display is to separatelyform an organic light emitting element that emits red light, an organiclight emitting element that emits green light, and an organic lightemitting element that emits blue light using a conventional shadow masktechnique. To clarify, red, green, and blue organic light emittingelements as those described in Embodiments 6 through 8 are formed on asubstrate of a light emitting device like the ones described inEmbodiments 10, 11, and 13.

Another method of obtaining full-color display is to use color filters.In this method, organic light emitting elements that emit white lightare formed on a substrate having color filters as shown in FIG. 30A. Onthe substrate, the color filters are patterned and circuits as thoseshown in Embodiments 10, 11, and 13 are formed. An example of a whitelight emitting element according to the present invention is shown inFIG. 30B.

It is also possible to obtain full-color display by using a colorconversion method. In this method, organic light emitting element thatemits blue light are formed on a substrate having color conversionlayers. The color conversion layers are films of fluorescent paints orother materials that absorb visible light to emit light having awavelength longer than the wavelength of the absorbed visible light. Onthe substrate, the color conversion layers are patterned and circuits asthose shown in Embodiments 10, 11, and 13 are formed. An example of ablue light emitting element according to the present invention is shownin FIG. 31B.

Other than these typical methods, a color conversion method by photobleaching can also be applied to the present invention if propermaterials are chosen.

Embodiment 15

This embodiments shows an example of attaching a printed wiring board tothe light emitting device shown in Embodiment 13 to make the device intoa module.

In a module shown in FIG. 32A, a TAB tape 12004 is attached to asubstrate 12001 (here including a pixel portion 12002 and wiring lines12003 a and 12003 b), and a printed wiring board 12005 is attached tothe substrate through the TAB tape 12004.

A functional block diagram of the printed wiring board 12005 is shown inFIG. 32B. An IC functioning as at least I/O ports (input or outputportions) 12006 and 12009, a data signal side-driving circuit 12007, anda gate signal side driving circuit 12008 are provided within the printedwiring board 12005.

In this specification, a module structured by attaching a TAB tape to asubstrate with a pixel portion formed on its surface and by attaching aprinted wiring board that functions as a driving circuit to thesubstrate through the TAB tape as above is specially named a module withexternal driving circuit.

Any of organic light emitting elements disclosed in the presentinvention can be used as the organic light emitting element included inthe light emitting device of this embodiment.

Embodiment 16

This embodiment shows an example of attaching a printed wiring board tothe light emitting device shown in Embodiment 10, 11, or 13 to make thedevice into a module.

In a module shown in FIG. 33A, a TAB tape 12105 is attached to asubstrate 12101 (here including a pixel portion 12102, a data signalside driving circuit 12103, a gate signal side driving circuit 12104,and wiring lines 12103 a and 12104 a), and a printed wiring board 12106is attached to the substrate through the TAB tape 12105. A functionalblock diagram of the printed wiring board 12106 is shown in FIG. 33B.

As shown in FIG. 33B, an IC functioning as at least I/O ports 12107 and12110 and a control unit 12108 is provided within the printed wiringboard 12106. A memory unit 12109 is provided here but it is not alwaysnecessary. The control unit 12108 is a portion having functions forcontrolling the driving circuits and correction of image data.

In this specification, a module structured by attaching a printed wiringboard that has functions as a controller to a substrate on which anorganic light emitting element is formed as above is specially named amodule with external controller.

Any of organic light emitting elements disclosed in the presentinvention can be used as the organic light emitting element included inthe light emitting device of this embodiment.

Embodiment 17

This embodiment shows an example of light emitting device in which anorganic light emitting element is driven in accordance with digital timegray scale display. The light emitting device of the present inventioncan provide uniform images in digital time gray scale display andtherefore is very useful.

FIG. 34A shows the circuit structure of a pixel that uses an organiclight emitting element. Tr represents a transistor and Cs represents astorage capacitor. In this circuit, when a gate line is selected, acurrent flows into Tr1 from a source line and a voltage corresponding tothe signal is accumulated in Cs. Then a current controlled by thegate-source voltage (V_(gs)) of Tr2 flows into Tr2 and the organic lightemitting element.

After Tr1 is selected, Tr1 is turned OFF to hold the voltage (V_(gs)) ofCs. Accordingly, a current continues to flow in an amount dependent ofV_(gs).

FIG. 34B shows a chart for driving this circuit in accordance withdigital time gray scale display. In digital time gray scale display, oneframe is divided into plural sub-frames. FIG. 34B shows 6 bit gray scalein which one frame is divided into six sub-frames. In this case, theratio of light emission periods of the sub-frames is 32:16:8:4:2:1.

FIG. 34C schematically shows driving circuits of TFT substrate in thisembodiment. A gate driver and a source driver are provided on the samesubstrate. In this embodiment, the pixel circuit and the drivers aredesigned to be digitally driven. Accordingly, fluctuation in TFTcharacteristic does not affect the device and the device can displayuniform images.

Embodiment 18

Being self-luminous, a light emitting device using an organic lightemitting element has better visibility in bright places and widerviewing angle than liquid crystal display devices. Therefore the lightemitting device can be used for display units of various electricappliances.

Given as examples of an electric appliance that employs a light emittingdevice manufactured in accordance with the present invention are videocameras, digital cameras, goggle type displays (head mounted displays),navigation systems, audio reproducing devices (such as car audio andaudio components), notebook computers, game machines, portableinformation terminals (such as mobile computers, cellular phones,portable game machines, and electronic books), and image reproducingdevices equipped with recording media (specifically, devices with adisplay device that can reproduce data in a recording medium such as adigital video disk (DVD) to display an image of the data). Wide viewingangle is important particularly for portable information terminalsbecause their screens are often slanted when they are looked at.Therefore it is preferable for portable information terminals to employthe light emitting device using the organic light emitting element.Specific examples of these electric appliance are shown in FIGS. 12A to12H.

FIG. 12A shows a display device, which is composed of a case 2001, asupport base 2002, a display unit 2003, speaker units 2004, a videoinput terminal 2005, etc. The light emitting device manufactured inaccordance with the present invention can be applied to the display unit2003. Since the light emitting device having the organic light emittingelement is self-luminous, the device does not need back light and canmake a thinner display unit than liquid crystal display devices. Thedisplay device refers to all display devices for displaying information,including ones for personal computers, for TV broadcasting reception,and for advertisement.

FIG. 12B shows a digital still camera, which is composed of a main body2101, a display unit 2102, an image receiving unit 2103, operation keys2104, an external connection port 2105, a shutter 2106, etc. The lightemitting device manufactured in accordance with the present inventioncan be applied to the display unit 2102.

FIG. 12C shows a notebook personal computer, which is composed of a mainbody 2201, a case 2202, a display unit 2203, a keyboard 2204, anexternal connection port 2205, a pointing mouse 2206, etc. The lightemitting device manufactured in accordance with the present inventioncan be applied to the display unit 2203.

FIG. 12D shows a mobile computer, which is composed of a main body 2301,a display unit 2302, a switch 2303, operation, keys 2304, an infraredport 2305, etc. The light emitting device manufactured in accordancewith the present invention can be applied to the display unit 2302.

FIG. 12E shows a portable image reproducing device equipped with arecording medium (a DVD player, to be specific). The device is composedof a main body 2401, a case 2402, a display unit A 2403, a display unitB 2404, a recording medium (DVD or the like) reading unit 2405,operation keys 2406, speaker units 2407, etc. The display unit A 2403mainly displays image information whereas the display unit B 2404 mainlydisplays text information. The light emitting device manufactured inaccordance with the present invention can be applied to the displayunits A 2403 and B 2404. The image reproducing device equipped with arecording medium also includes home-video game machines.

FIG. 12F shows a goggle type display (head mounted display), which iscomposed of a main body 2501, display units 2502, and arm units 2503.The light emitting device manufactured in accordance with the presentinvention can be applied to the display units 2502.

FIG. 12G shows a video camera, which is composed of a main body 2601, adisplay unit 2602, a case 2603, an external connection port 2604, aremote control receiving unit 2605, an image receiving unit 2606, abattery 2607, an audio input unit 2608, operation keys 2609, etc. Thelight emitting device manufactured in accordance with the presentinvention can be applied to the display unit 2602.

FIG. 12H shows a cellular phone, which is composed of a main body 2701,a case 2702, a display unit 2703, an audio input unit 2704, an audiooutput unit 2705, operation keys 2706, an external connection port 2707,an antenna 2708, etc. The light emitting device manufactured inaccordance with the present invention can be applied to the display unit2703. If the display unit 2703 displays white letters on blackbackground, the cellular phone consumes less power.

If the luminance of light emitted from organic materials is raised infuture, the light emitting device can be used in front or rearprojectors by enlarging outputted light that contains image informationthrough a lens or the like and projecting the light.

These electric appliances now display with increasing frequencyinformation sent through electronic communication lines such as theInternet and CATV (cable television), especially, animation information.Since organic materials have very fast response speed, the lightemitting device is suitable for animation display.

In the light emitting device, light emitting portions consume power andtherefore it is preferable to display information in a manner thatrequires less light emitting portions. When using the light emittingdevice in display units of portable information terminals, particularlycellular phones and audio reproducing devices that mainly display textinformation, it is preferable to drive the device such that non-tightemitting portions form a background and light emitting portions formtext information.

As described above, the application range of the light emitting devicemanufactured in accordance with the present invention is so wide that itis applicable to electric appliances of any field. The electricappliances of this embodiment can employ as their display units anylight emitting device that has an organic light emitting devicedisclosed in the present invention.

Embodiment 19

The light emitting devices of the present invention which have beendescribed in the embodiments above have advantages of low powerconsumption and long lifetime. Accordingly, electric appliances thatinclude those light emitting devices as their display units can operateconsuming less power than conventional ones and are durable. Theadvantages are very useful especially for electric appliances that usebatteries as power sources, such as portable equipment, because lowpower consumption leads directly to conveniences (batteries lastlonger).

The light emitting device is self-luminous to eliminate the need forback light as the one in liquid crystal displays, and has an organiccompound film whose thickness is less than 1 μm. Therefore the lightemitting device can be made thin and light-weight. Electric appliancesthat include the light emitting device as their display units areaccordingly thinner and lighter than conventional ones. This too leadsdirectly to conveniences (lightness and compactness in carrying themaround) and is very useful particularly for portable equipment and likeother electric appliances. Moreover, being thin (unvoluminous) isdoubtlessly useful for all of the electric appliances in terms oftransportation (a large number of appliances can be transported in amass) and installation (space-saving).

Being self-luminous, the light emitting device is characterized byhaving better visibility in bright places than liquid crystal displaydevices and wide viewing angle. Therefore electric appliances thatinclude the light emitting device as their display units areadvantageous also in terms of easiness in viewing display.

To summarize, electric appliances that use a light emitting device ofthe present invention have, in addition to merits of conventionalorganic light emitting elements, namely, thinness/lightness and highvisibility, new features of low power consumption and long lifetime, andtherefore are very useful.

This embodiment shows examples of the electric appliances that includeas display units the light emitting device of the present invention.Specific examples thereof are shown in FIGS. 35A to 36B. The organiclight emitting element included in the electric appliance of thisembodiment can be any element according to the present invention. Thelight emitting device included in the electric appliance of thisembodiment can have any of the configurations illustrated in FIGS. 24Ato 34C.

FIG. 35A shows a display device using an organic light emitting element.The display is composed of a case 12301 a, a support base 12302 a, and adisplay unit 12303 a. By using a light emitting device of the presentinvention as the display unit 12303 a, the display can be thin andlight-weight, as well as durable. Accordingly, transportation issimplified, space is saved in installation, and lifetime is long.

FIG. 35B shows a video camera, which is composed of a main body 12301 b,a display unit 12302 b, an audio input unit 12303 b, operation switches12304 b, a battery 12305 b, and an image receiving unit 12306 b. Byusing a light emitting device of the present invention as the displayunit 12302 b, the video camera can be thin and light-weight, andconsumes less power. Accordingly, battery consumption is reduced andcarrying the video camera is less inconvenient.

FIG. 35C shows a digital camera, which is composed of a main body 12301c, a display unit 12302 c, an eye piece unit 12304 c, and operationswitches 12304 c. By using a light emitting device of the presentinvention as the display unit 12302 c, the digital camera can be thinand light-weight, and consumes less power. Accordingly, batteryconsumption is reduced and carrying the digital camera is lessinconvenient.

FIG. 35D shows an image reproducing device equipped with a recordingmedium. The device is composed of a main body 12301 d, a recordingmedium (such as CD, LD, or DVD) 12302 d, operation switches 12303 d, adisplay unit (A) 12304 d, and a display unit (B) 12305 d. The displayunit (A) 12304 d mainly displays image information whereas the displayunit (B) 12305 d mainly displays text information. By using a lightemitting device of the present invention as the display unit (A) 12304 dand the display unit (B) 12305 d, the image reproducing device consumesless power and can be thin and light-weight as well as durable. Theimage reproducing device equipped with a recording medium also includesCD players and game machines.

FIG. 35E shows a (portable) mobile computer, which is composed of a mainbody 12301 e, a display unit 12302 e, an image receiving unit 12303 e, aswitch 12304 e, and a memory slot 12305 e. By using a light emittingdevice of the present invention as the display unit 12302 e, theportable computer can be thin and light-weight, and consumes less power.Accordingly, battery consumption is reduced and carrying the computer isless inconvenient. The portable computer can store information in aflash memory or a recording medium obtained by integrating non-volatilememories and can reproduce the stored information.

FIG. 35F shows a personal computer, which is composed of a main body12301 f, a case 12302 f, a display unit 12303 f, and a keyboard 12304 f.By using a light emitting device of the present invention as the displayunit 12303 f, the personal computer can be thin and light-weight, andconsumes less power. The light emitting device is a great merit in termsof battery consumption and lightness especially for a notebook personalcomputer or other personal computers that are carried around.

These electric appliances now display with increasing frequencyinformation sent through electronic communication lines such as theInternet and radio communications such as radio wave, especially,animation information. Since organic light emitting elements have veryfast response speed, the light emitting device is suitable for animationdisplay.

FIG. 36A shows a cellular phone, which is composed of a main body 12401a, an audio output unit 12402 a, an audio input unit 12403 a, a displayunit 12404 a, operation switches 12405 a, and an antenna 12406 a. Byusing a light emitting device of the present invention as the displayunit 12404 a, the cellular phone can be thin and light-weight, andconsumes less power. Accordingly, battery consumption is reduced,carrying the cellular phone is easy, and the main body is compact.

FIG. 36B shows audio (specifically, car audio), which is composed of amain body 12401 b, a display unit 12402 b, and operation switches 12403b and 12404 b. By using a light emitting device of the present inventionas the display unit 12402 b, the audio can be thin and light-weight, andconsumes less power. Although car audio is taken as an example in thisembodiment, the audio may be home audio.

It is effective to give the electric appliances shown in FIGS. 35A to36B a function of modulating the luminance of emitted light inaccordance with the brightness of the surroundings where the electricappliances are used by providing the electric appliances with photosensors as measures to detect the brightness of the surroundings. A usercan recognize image or text information without difficulties if thecontrast ratio of the luminance of emitted light to the brightness ofthe surroundings is 100 to 150. With this function, the luminance of animage can be raised for better viewing when the surroundings are brightwhereas the luminance of an image can be lowered to reduce powerconsumption when the surroundings are dark.

Various electric appliances that employ as light sources the lightemitting device of the present invention are also thin and light-weightand can operate consuming less power, which makes them very usefulappliances. Light sources of liquid crystal display devices, such asback light or front light, or light sources of lighting fixtures aretypical uses of the light emitting device of the present invention as alight source.

When liquid crystal displays are used as the display units of theelectric appliances shown in FIGS. 35A to 36B according to thisembodiment, the electric appliances can be thin and light-weight andconsume less power if those liquid crystal displays use as back light orfront light the light emitting device of the present invention.

Embodiment 20

In this embodiment, an example of an active matrix type constant-currentdriving circuit is described, which is driven by flowing the constantcurrent in the organic tight emitting element of the present invention.The circuit structure thereof is shown in FIG. 37.

The pixel 1810 shown in FIG. 37 has the signal line Si, the firstscanning line Gj, the second scanning line Pj and the power source lineVi. In addition, the pixel 1810 has Tr1, Tr2, Tr3, Tr4, the organiclight emitting element 1811 of a mixed junction type and the retentioncapacitor 1812.

Both gates of Tr3 and Tr4 are connected with the first scanning line Gj.As for the source and the drain of Tr3, the one is connected with thesignal line Si, the other is connected with the source of Tr2. Further,the source and the drain of Tr4, the one is connected with the source ofTr2, the other is connected to the gate of Tr1. Thus, the either of thesource and the drain of Tr3 and the either of the source or the drain ofTr4 are connected with each other.

The source of Tr1 is connected with the power source line Vi, the drainis connected with the source of Tr2. The gate of Tr2 is connected to thesecond scanning line Pj. And, the drain of the Tr2 is connected with apixel electrode in the organic light emitting element 1811. The organiclight emitting element 1811 has the pixel electrode, the counterelectrode and the organic light emitting layer provided between thepixel electrode and the counter electrode. The counter electrode of theorganic light emitting element 1811 is applied constant voltage by apower source provided at the external of a light emitting panel.

Tr3 and Tr4 can adopt both n-channel type TFT and p-channel type TFT.However, the polarities of Tr3 and Tr4 are the same. Further, Tr1 canadopt both n-channel type TFT and p-channel type TFT. Tr2 can adopt bothn-channel type TFT and p-channel type TFT. With respect to the polarity,in the case of the pixel electrode of the light emitting electrode andthe counter electrode, the one is an anode, the other is a cathode. Inthe case that the Tr2 is an n-channel type TFT, it is preferable to usethe cathode as a pixel electrode, and the anode as a counter electrode.

The retention capacitor 1812 is formed between the gate and the sourceof Tr1. The retention capacitor 1812 is provided to maintain morecertainly the voltage (V_(GS)) between the gate and the source of Tr1.However, it is not necessary always provided.

In the pixel shown in FIG. 37, the current supplied to the signal lineSi is controlled at the current source of the signal line drivingcircuit.

By applying the above-mentioned circuit structure, the constant-currentdriving can be realized, by which the brightness can be kept by flowinga constant current in the organic light emitting element. The organiclight emitting element having a mixture region of the present inventionhas a longer lifetime than that of prior organic light emitting element.The organic light emitting element is effective because longer lifetimecan be realized by implementing above-mentioned constant-currentdriving.

As described above, the present invention can lower energy barriers atinterfaces between organic layers in an organic compound layer that hasa laminate structure by placing, in the interfaces, mixed layers formedof an organic compound that constitutes one organic layer and an organiccompound that constitutes the other organic layer. This improvesinjection of carriers between organic layers and therefore an organiclight emitting element that has low drive voltage and long elementlifetime can be obtained.

Furthermore, a light emitting device that consumes less power and haslonger lifetime can be obtained by carrying out the present invention.Moreover, using this light emitting device for a light source or adisplay unit makes an electric appliance that consumes less power andlasts longer (and is bright if the light emitting device is used as alight source).

TABLE 1 Combination 1st layer 2nd layer A hole injecting layer holetransporting layer B electron injecting layer electron transportinglayer C hole transporting layer light emitting layer D electrontransporting layer light emitting layer E electron transporting layerhole blocking layer

1. A light emitting device comprising: a layer comprising an inorganiccompound; a hole transporting layer comprising an organic compound; anda mixed region comprising the inorganic compound and the organiccompound between the layer and the hole transporting layer.
 2. A lightemitting device comprising: a layer including an alkaline metal; anelectron transporting layer comprising an organic compound; and a mixedregion comprising the alkaline metal and the organic compound betweenthe layer and the electron transporting layer.
 3. The light emittingdevice according to claim 2, wherein the layer including an alkalinemetal includes an alkaline metal halide.
 4. The light emitting deviceaccording to claim 3, wherein the layer including an alkaline metalincludes an alkaline metal oxide.
 5. The light emitting device accordingto claim 2, wherein the alkaline metal oxide is a lithium oxide.
 6. Thelight emitting device according to claim 2, wherein the layer includingan alkaline metal includes an alkaline metal complex.
 7. The lightemitting device according to claim 6, wherein the alkaline metal complexis a lithium acetyl acetonate or 8-quinolinolate-lithium.
 8. A lightemitting device comprising: an electron injection layer including analkaline metal; an electron transporting layer comprising an organiccompound; and a mixed region comprising the alkaline metal and theorganic compound between the electron injection layer and the electrontransporting layer.
 9. The light emitting device according to claim 8,wherein the electron injection layer including an alkaline metalincludes an alkaline metal halide.
 10. The light emitting deviceaccording to claim 8, wherein the electron injection layer including analkaline metal includes an alkaline metal oxide.
 11. The light emittingdevice according to claim 10, wherein the alkaline metal oxide is alithium oxide.
 12. The light emitting device according to claim 8,wherein the electron injection layer including an alkaline metalincludes an alkaline metal complex.
 13. The light emitting deviceaccording to claim 12, wherein the alkaline metal complex is a lithiumacetyl acetonate or 8-quinolinolate-lithium.